2SC4306TTP-FA datasheet, PDF - EEWORLD Datasheet

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2SC4306TTP-FA: DescriptionSmall Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size35KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC4306TTP-FA Overview

Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN

2SC4306TTP-FA Parametric

Parameter Name	Attribute value
Objectid	1543717444
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	1150 ns
Maximum opening time (tons)	300 ns

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Ordering number:ENN2930A

NPN Epitaxial Planar Silicon Transistor

2SC4306

High-Current Switching Applications

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· High-speed switching.

· Large current capacity.

· Small and slim package making it easy to make

2SC4306-used set smaller.

Package Dimensions

unit:mm

2045B

[2SC4306]

6.5

5.0

1.5

2.3

0.5

0.85

0.7

5.5

7.0

0.8

1.6

1.2

0.6

7.5

0.5

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SC4306]

6.5

5.0

2.3

1.5

0.5

5.5

7.0

0.85

0.6

0.8

0.5

2.5

1.2

0 to 0.2

1.2

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80504TN (PC)/D2598HA (KT)/8219MO/4049MO, TS No.2930–1/4

2SC4306

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2004. Specifications and information herein are subject to

change without notice.

PS No.2930–4/4

2SC4306TTP-FA Related Products

	2SC4306TTP-FA	2SC4306RTP-FA	2SC4306RTP	2SC4306STP	2SC4306STP-FA	2SC4306TTP	2SC4306TP-FA	2SC4306TP
Description	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN
Objectid	1543717444	1543717438	1543717439	1543717441	1543717440	1543717445	1543717442	1543717443
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	4	4	3	3	4	3	4	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	100	100	140	140	200	70	70
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	3	3	2	3	2	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO	YES	NO	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Maximum off time (toff)	1150 ns	1150 ns	1150 ns	1150 ns	1150 ns	1150 ns	1150 ns	1150 ns
Maximum opening time (tons)	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns

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