Ordering number : ENA1062
2SC5226A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5226A
Features
•
•
•
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Low-noise
:
High gain
:
High cut-off frequency :
NF=1.0dB typ (f=1GHz).
⏐S21e⏐
2
=12dB typ (f=1GHz).
fT=7GHz typ.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
2
70
150
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
60*
Conditions
Ratings
min
typ
max
1.0
10
270*
Unit
μA
μA
Continued on next page.
* : The 2SC5226A is classified by 20mA hFE as follows :
Marking
LN3
LN4
LN5
Rank
hFE
3
60 to 120
4
90 to 180
5
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408AB TI IM TC-00001340 No. A1062-1/6
2SC5226A
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
fT
Cob
Cre
⏐
S21e
⏐
1
2
⏐
S21e
⏐
2
NF
2
Conditions
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
Ratings
min
5
typ
7
0.75
0.5
9
12
8
1.0
1.8
1.2
max
Unit
GHz
pF
pF
dB
dB
dB
Package Dimensions
unit : mm (typ)
7023-009
0.425
3
1.25
2.1
0 to 0.1
0.425
1
2
0.65 0.65
2.0
0.3
0.9
0.6
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
3
2
hFE -- IC
VCE=5V
0.2
0.3
0.15
2
fT -- IC
VCE=5V
Gain-Bandwidth Product, fT -- GHz
10
7
5
DC Current Gain, hFE
100
7
5
3
2
3
2
10
7
5
3
5
7 1.0
2
3
5
7 10
2
3
5
2
7 100
ITR07919
1.0
7
5
7
1.0
2
3
5
7
10
2
3
5
7 100
2
ITR07920
Collector Current, IC -- mA
3
2
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
Collector Current, IC -- mA
3
2
Cre -- VCB
f=1MHz
Output Capacitance, Cre -- pF
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
ITR07921
Collector-to-Base Voltage, VCB -- V
ITR07922
No. A1062-2/6
Suggestions & Announcements
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