Ordering number:ENN1069C
NPN Triple Diffused Planar Silicon Transistor
2SC3150
800V/3A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥900V).
· High-speed switching.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SC3150]
10.2
3.6
5.1
4.5
1.3
2.7
18.0
5.6
1.2
0.8
14.0
15.1
6.3
0.4
1
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Conditions
2.7
Ratings
900
800
7
3
10
1.5
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.2A
VCE=5V, IC=1A
10*
8
Conditions
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3150 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
K
10 to 20
L
15 to 30
M
20 to 40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51304TN (PC)/N1098HA (KT)/5097KI/D064MW/6092KI No.1069–1/4
2SC3150
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
VCE=10V, IC=0.2A
VCB=10V, f=1MHz
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
900
800
7
800
800
900
1.0
3.0
0.7
Conditions
Ratings
min
typ
15
60
2.0
1.5
max
Unit
MHz
pF
V
V
V
V
V
V
V
V
µs
µs
µs
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=5mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEO(sus) IC=3A, L=500µH, IB=1A
VCEX(sus)1
IC=1A, IB1=0.2A, IB2=–0.2A, L=2mH, clamped
VCEX(sus)2
IC=0.5A, IB1=0.1A, IB2=–0.1A, L=5mH, clamped
ton
tstg
tf
IC=2A, IB1=0.4A, IB2=–0.8A, RL=200
Ω
, VCC=400V
IC=2A, IB1=0.4A, IB2=–0.8A, RL=200
Ω
, VCC=400V
IC=2A, IB1=0.4A, IB2=–0.8A, RL=200
Ω
, VCC=400V
Switching Time Test Circuit
PW=20µs
D.C.≤1%
IB1
RB
INPUT
VR
50Ω
IB2
OUTPUT
RL
200Ω
+
470µF
400V
+
100µF
--5V
2
IC -- VCE
From top
100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
Pulse
4
IC -- VCE
Pulse
A
800m
700mA
Collector Current, IC – A
Collector Current, IC – A
3
1
2
600mA
500mA
400mA
300mA
200mA
20mA
10mA
0
0
2
4
6
1
100mA
IB=0
8
10
ITR05398
0
0
2
4
IB=0
6
8
10
ITR05399
Collector-to-Emitter Voltage, VCE – V
3.2
2.8
Collector-to-Emitter Voltage, VCE – V
100
7
5
IC -- VBE
VCE=5V
Pulse
hFE -- IC
VCE=5V
Pulse
Collector Current, IC – A
DC Current Gain, hFE
2.4
2.0
3
2
Ta=120
°C
25
°C
0
°
C
Ta=1
2
--40
°
C
1.6
1.2
0.8
0.4
0
0
0.2
0.4
10
7
5
3
2
1.0
0.6
25
°
C
--40
°
C
0.8
1.0
1.2
ITR05400
5
Base-to-Emitter Voltage, VBE – V
7 0.01
2
3
5
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
5
ITR05401
No.1069–2/4
2SC3150
100
5
VCE(sat) -- IC
IC / IB=5
Pulse
10
7
VBE(sat) -- IC
IC / IB=5
Pulse
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
3
2
10
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
120
°
C
3
2
1.0
5
3
2
1.0
7
5
3
2
5
7 0.01
--4
0
°
C
Ta=--40
°C
25
°C
Ta
=
25
°
C
120°C
0.1
5
5
7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5
2
3
5
Collector Current, IC – A
10
7
5
3
2
ITR05402
10
5
3
2
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
5
ITR05403
SW Time -- IC
tstg
Forward Bias A S O
ICP=10A
IC=3A
Switching Time, SW time –
µs
R load
IC=5IB1=--2.5IB2
VCC=400V
10
0
µ
s
Collector Current, IC – A
s
1m
1.0
5
3
2
ms
10
1.0
7
5
3
2
DC
op
tf
era
0.1
5
3
2
tio
to
n
n
0.1
7
5
3
5
7
0.1
2
3
5
7
0.01
5
3
Single pulse
3
5
7
Collector Current, IC – A
1.0
2
3
5
ITR05404
60
Collector-to-Emitter Voltage, VCE – V
ITR05405
10
2
3
5
7 100
2
3
5
7 1000
2
10
Reverse Bias A S O
PC -- Ta
3
2
Collector Dissipation, P
C
– W
2
3
5
7 1000
2
– V
ITR05406
Collector Current, IC – A
7
5
50
40
1.0
7
5
3
2
30
20
0.1
7
5
2
IC=5IB1=--5IB2
--IB2=0.6A(IC>3A)
Single pulse
3
5
7
100
10
0
0
20
40
60
80
100
120
140 150 160
ITR05407
Collector-to-Emitter Voltage, VCE
Ambient Temperature, Ta – ˚C
No.1069–3/4
2SC3150
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2004. Specifications and information herein are subject to
change without notice.
PS No.1069–4/4
RF/Wirelessly
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