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2SK1507-01M

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size91KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2SK1507-01M Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2SK1507-01M Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountNO
Base Number Matches1
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