Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknow |
| Other features | HIGH RELIABILITY |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 800 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JEDEC-95 code | TO-218 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 80 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 15 MHz |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
