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MT5C2565-15P

Description
Standard SRAM, 64KX4, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size143KB,12 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric Compare View All

MT5C2565-15P Overview

Standard SRAM, 64KX4, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

MT5C2565-15P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeDIP
package instruction0.300 INCH, PLASTIC, DIP-28
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length36.83 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of ports1
Number of terminals28
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX4
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height4.32 mm
Maximum standby current0.003 A
Minimum standby current4.5 V
Maximum slew rate0.165 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
OBSOLETE 3/1/95
MT5C2565
64K x 4 SRAM
SRAM
FEATURES
• High speed: 10, 12, 15, 20 and 25
• High-performance, low-power, CMOS double-metal
process
• Single +5V
±10%
power supply
• Easy memory expansion with
?
C
/
E and
?
O
/
E options
• All inputs and outputs are TTL-compatible
64K x 4 SRAM
WITH OUTPUT ENABLE
PIN ASSIGNMENT (Top View)
28-Pin SOJ
(SD-2)
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE
OE
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
A15
A14
A13
A12
A11
A10
NC
NC
DQ4
DQ3
DQ2
DQ1
WE
28-Pin DIP
(SA-4)
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
A15
A14
A13
A12
A11
A10
NC
NC
DQ4
DQ3
DQ2
DQ1
WE
OPTIONS
• Timing
10ns access
12ns access
15ns access
20ns access
25ns access
• Packages
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention (optional)
• Low power (optional)
MARKING
-10
-12
-15
-20
-25
None
DJ
L
P
None
IT
AT
XT
• Temperature
Commercial (0°C to +70°C)
Industrial
(-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended
(-55°C to +125°C)
Vss
• Part Number Example: MT5C2565DJ-15 L
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
GENERAL DESCRIPTION
The MT5C2565 is organized as a 65,536 x 4 SRAM using
a four-transistor memory cell with a high-speed, low-power
CMOS process. Micron SRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (?C
/
E) and output enable (?O
/
E) with
this organization. These enhancements can place the out-
puts in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (?W
/
E) and
?
C
/
E inputs are both LOW. Reading is
accomplished when
?
W
/
E remains HIGH and
?
C
/
E and
?
OE go
/
LOW. The device offers a reduced power standby mode
MT5C2565
Rev. 11/94
when disabled. This allows system designers to meet low
standby power requirements.
The “P” version provides a reduction in both operating
current (I
CC
) and TTL standby current (I
SB
1
). The latter is
achieved through the use of gated inputs on the
?
W
/
E,
?
O
/
E and
address lines, which also facilitates the design of battery
backed systems. That is, the gated inputs simplify the
design effort and circuitry required to protect against inad-
vertent battery current drain during power-down, when
inputs may be at undefined levels.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
1
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1994,
Micron Semiconductor, Inc.

MT5C2565-15P Related Products

MT5C2565-15P MT5C2565-20P MT5C2565DJ-25P MT5C2565DJ-15P MT5C2565DJ-20P
Description Standard SRAM, 64KX4, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Standard SRAM, 64KX4, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Standard SRAM, 64KX4, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 64KX4, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 64KX4, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code DIP DIP SOJ SOJ SOJ
package instruction 0.300 INCH, PLASTIC, DIP-28 0.300 INCH, PLASTIC, DIP-28 0.300 INCH, PLASTIC, SOJ-28 0.300 INCH, PLASTIC, SOJ-28 0.300 INCH, PLASTIC, SOJ-28
Contacts 28 28 28 28 28
Reach Compliance Code unknown not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 15 ns 20 ns 25 ns 15 ns 20 ns
I/O type COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDIP-T28 R-PDIP-T28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28
JESD-609 code e0 e0 e0 e0 e0
length 36.83 mm 36.83 mm 18.44 mm 18.44 mm 18.44 mm
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4 4 4
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 28 28 28 28 28
word count 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C
organize 64KX4 64KX4 64KX4 64KX4 64KX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP SOJ SOJ SOJ
Encapsulate equivalent code DIP28,.3 DIP28,.3 SOJ28,.34 SOJ28,.34 SOJ28,.34
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 235 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.32 mm 4.32 mm 3.68 mm 3.68 mm 3.68 mm
Maximum standby current 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.165 mA 0.15 mA 0.14 mA 0.165 mA 0.15 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE J BEND J BEND J BEND
Terminal pitch 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 7.62 mm 7.62 mm 7.67 mm 7.67 mm 7.67 mm
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