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2SK2595AX

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, RP8P-2
CategoryDiscrete semiconductor    The transistor   
File Size152KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK2595AX Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, RP8P-2

2SK2595AX Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage17 V
Maximum drain current (Abs) (ID)1.1 A
Maximum drain current (ID)1.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0206-0300
Rev.3.00
Aug.26.2004
Features
High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W,
ηD
= 50% min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
RP8P
D
G
1
3
2
S
1. Gate
2. Source
3. Drain
Note:
Marking is "AX".
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Pch
Note2
Tch
Tstg
Ratings
17
±10
1.1
5
20
150
– 45 to +150
Unit
V
V
A
A
W
°C
°C
Rev.3.00, Aug.26.2004, page 1 of 13
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