Ordering number : EN1788B
2SA1418 / 2SC3648
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1418 / 2SC3648
Applications
•
High-Voltage Switching,
Preriver Applications
Color TV audio output, inverter.
Features
•
•
•
•
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
( ) : 2SA1418
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
(--)180
(--)160
(--)6
(--)0.7
(--)1.5
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Marking 2SA1418 : AD
2SC3648 : CD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010CB TK IM / O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS No.1788-1/5
2SA1418 / 2SC3648
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)120V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)5V, IC=(-
-)100mA
VCE=(--)5V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(-
-)250mA, IB=(-
-)25mA
IC=(-
-)250mA, IB=(-
-)25mA
IC=(-
-)10μA, IE=0A
IC=(-
-)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)180
(--)160
(--)6
(60)50
(900)1000
(60)60
100*
90
120
(11)8
(--0.2)0.12
(--)0.85
(-
-0.5)0.4
(--)1.2
MHz
pF
V
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
(--)0.1
(--)0.1
400*
Unit
μA
μA
*:
The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
IB1
IB2
RB
VR
50Ω
+
100μF
--5V
+
470μF
100V
333Ω
PW=20μs
D.C.≤1%
INPUT
IC=20IB1=--20IB2=300mA
(For PNP, the polarity is reversed)
No.1788-2/5
2SA1418 / 2SC3648
--800
--700
IC -- VCE
From top
--200mA
--180mA
--160mA
--140mA
--120mA
800
IC -- VCE
From top
100mA
90mA
80mA
70mA
60mA
2SC3648
50m
A
40mA
30mA
2SA1418
700
Collector Current, IC -- mA
--600
--500
--400
--300
--200
--100
Collector Current, IC -- mA
mA
--100
--80mA
--60mA
--40mA
--20mA
600
500
400
300
200
100
20mA
10mA
IB=0mA
0
0
--200
--400
--600
--800
--1000
ITR03558
1000
0
0
200
400
IB=0mA
600
800
1000
ITR03559
Collector-to-Emitter Voltage, VCE -- mV
--800
--700
IC -- VCE
Collector-to-Emitter Voltage, VCE -- mV
IC -- VCE
2SA1418
2SC3648
Collector Current, IC -- mA
Collector Current, IC -- mA
--600
--500
--400
--300
--200
--100
0
0
mA
A
5.0
--4.5m
A
--
--4.0m
mA
--3.5
A
--3.0m
--2.5mA
--2.0mA
--1.5mA
800
600
A
3.5m
3.0mA
A
2.5m
2.0mA
400
4.
0m
A
1.5mA
--1.0mA
--0.5mA
1.0mA
200
0.5mA
--60
--70
--80
0
0
IB=0mA
--10
--20
--30
--40
--50
IB=0mA
10
20
30
40
50
60
70
80
Collector-to-Emitter Voltage, VCE -- V
1000
ITR03560
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
ITR03561
VCE(sat) -- IC
Collector Current, IC -- mA
800
600
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA1418 / 2SC3648
VCE=5V
For PNP, minus sign is omitted
2SA1418 / 2SC3648
IC / IB=10
2SC
3648
8
400
141
2SA
2S
4
A1
18
200
648
C3
2S
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03562
2
For PNP, minus sign is omitted
3
5
7
10
2
3
5
7 100
2
3
5
Base-to-Emitter Voltage, VBE -- V
1000
7
5
3
Collector Current, IC -- mA
1000
7
5
3
7 1000
2
ITR03563
hFE -- IC
hFE -- IC
2SC3648
Pulse
2SA1418
Pulse
DC Current Gain, hFE
DC Current Gain, hFE
2
2
VC
10V
2V
=--
V CE
100
7
5
3
2
10
7
5
3
3
5
7
100
7
5
3
2
10
7
5
5V
=2
E
--10V
--5V
V
--
10
--
100 2 3
Collector Current, IC -- mA
2
3
5
7
5
7
--
1000
2
3
3
5
7 10
2
3
5
7 100
2
3
5
ITR03564
Collector Current, IC -- mA
7 1000
2
ITR03565
No.1788-3/5
2SA1418 / 2SC3648
5
f T -- IC
2SA1418
5
f T -- IC
2SC3648
Gain-Brandwidth Product, f T -- MHz
Gain-Brandwidth Product, f T -- MHz
3
2
3
2
VCE=5V
10V
100
7
5
3
2
10V
V CE=
5V
100
7
5
3
2
10
5
7
--
10
2
3
--
100
Collector Current, IC -- mA
2
3
5
7
5
7
--
1000
10
5
7
10
2
3
5
7
100
2
3
5
ITR03566
3
2
1.0
7
5
3
2
0.1
7
5
3
2
100
7
Cob -- VCB
Collector Current, IC -- mA
7 1000
ITR03567
ASO
2SA1418 / 2SC3648
f=1MHz
ICP=1.5A
IC=0.7A
2SA1418 / 2SC3648
s
1m
s
m
10
Output Capacitance, Cob -- pF
5
3
2
Collector Current, IC -- A
10
0m
s
DC
10
7
5
3
2
2SA
141
8
8
op
e
2SC
364
rat
ion
For PNP, minus sign is omitted
1.0
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB --
1.8
1.6
7 100
2
V
ITR03568
0.01
7
5
1.0
Ta=25
°
C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
For PNP, minus sign is omitted
2
3
5
7
10
2
3
5
7
100
2
3
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
ITR03570
Collector Dissipation, PC -- W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
M
ou
nte
d
on
a
ce
ram
ic
bo
a
rd
No h
eat s
ink
(2
50
m
m
2
✕
0
.8
mm
)
140
160
0
20
40
60
80
100
120
Ambient Temperature, Ta --
°C
ITR03569
No.1788-4/5
2SA1418 / 2SC3648
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1788-5/5
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