2SK3985-01 datasheet, PDF - EEWORLD Datasheet

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2SK3985-01: DescriptionPower Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size293KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK3985-01 Overview

Power Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

2SK3985-01 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	227.9 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	3.6 A
Maximum drain current (ID)	3.6 A
Maximum drain-source on-resistance	2.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	14.4 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK3985-01

Features

High speed switching

No secondary breadown

Avalanche-proof

FUJI POWER MOSFET

200511

Super FAP-G Series

N-CHANNEL SILICON POWER MOSFET

Outline Drawings [mm]

TO-220AB

Low on-resistance

Low driving power

Applications

Switching regulators

DC-DC converters

UPS (Uninterruptible Power Supply)

Maximum ratings and characteristic

Absolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source voltage

Repetitive or non-repetitive

Non-repetitive

Maximum avalanche energy

Repetitive

Maximum avalanche energy

Maximum drain-source dV/dt

Peak diode recovery dV/dt

Maximum power dissipation

Symbol

DSX

D(puls]

/dt

dV/dt

Ratings

500

3.6

±14.4

±30

3.6

227.9

6.0

2.02

+150

Unit

kV/μs

°C

Remarks

VGS=-30V

Note *1

Note *2

Note *3

VDS < 500V

Note *4

Tc=25°C

Ta=25°C

Gate(G)

Source(S)

Equivalent circuit schematic

Drain(D)

Operating and storage

temperature range

stg

-55 to +150

Note *1 Tch< 150°C

Note *2 Starting Tch=25°C, I

=1.5A, L=186mH, V

=50V, R

=50Ω

limited by maximum channel temperrature and avalanche current.

See to ‘Avalanche Energy’ graph.

Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.

See to ‘Transient Thermal impedance’ graph.

Note *4 I

< -I

, -di/dt=50A/μs, Vcc < BV

DSS

, Tch < 150°C

Electrical characteristics (T

=25°C unless otherwise specified)

Item

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time t

Turn-off time t

off

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Symbol

DSS

GS(th)

DSS

GSS

DS(on)

iss

oss

rss

(on)

(off)

trr

Test Conditions

= 250

=0V

= 250

=500V V

=0V

=400V V

=0V

=±30V V

=0V

=1.8A V

=10V

=1.8A V

=25V

=0V

f=1MHz

=300V I

=1.8A

=10V

=10

=250V

=3.6A

=10V

=3.6A V

=0V T

=25°C

=3.6A V

=0V

-di/dt=100A/μs T

=25°C

=125°C

1.84

3.4

330

2.5

5.0

5.5

2.5

1.00

0.5

2.3

Min.

500

3.0

Typ.

Max.

5.0

250

100

2.30

500

5.0

7.5

8.5

3.8

1.50

Units

μA

1.7

μs

μC

Thermalcharacteristics

Item

Thermal resistance

Symbol

th(ch-c)

th(ch-a)

Test Conditions

channel to case

channel to ambient

Min.

Typ.

Max.

2.083

62.0

Units

°C/W

http://www.fujielectric.co.jp/fdt/scd/

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