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UFZT789ATA

Description
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size109KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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UFZT789ATA Overview

Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

UFZT789ATA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-based maximum capacity60 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.5 V

UFZT789ATA Related Products

UFZT789ATA FZT789ATA FZT789ATC UFZT789ATC UFZT789A
Description Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 300 300 300 300 300
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Number of components 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal surface MATTE TIN Matte Tin (Sn) MATTE TIN MATTE TIN Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V
Collector-based maximum capacity 60 pF 60 pF 60 pF 60 pF -

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