Bulletin I25181 rev. C 12/96
ST173S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
175A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST173S
175
85
275
4680
4900
110
100
1000 to 1200
15 to 25
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AB (TO-93)
www.irf.com
1
ST173S Series
Bulletin I25181 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST173S
10
12
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
500
450
330
170
50
V
DRM
50
60
I
TM
180
o
el
320
290
190
80
50
50
85
790
810
760
510
50
V
DRM
-
60
I
TM
100µs
550
540
490
300
50
-
85
4510
1970
1050
480
50
V
DRM
-
60
I
TM
Units
3310
1350
680
280
50
-
85
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST173S
175
85
275
4680
4900
3940
4120
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 75°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
110
100
77
71
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
1100
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST173S Series
Bulletin I25181 rev. C 12/96
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST173S
2.07
1.55
1.58
0.87
Units
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
mΩ
0.82
600
1000
mA
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST173S
1000
1.1
Min
15
Max
25
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST173S
500
40
Units
V/µs
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST173S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max., rated V
DRM
applied
www.irf.com
3
ST173S Series
Bulletin I25181 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST173S
-40 to 125
-40 to 150
0.105
0.04
31
(275)
24.5
(210)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Mounting surface, smooth, flat and greased
Lubricated threads
wt
Approximate weight
Case style
280
TO-209AB (TO-93)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
17
2
3
3
S
4
12
5
P
6
F
7
K
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16 x 1.5
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
15
CL
18
CP
t (µs)
20
CK
q
25
CJ
30
--
50
--
DP
DK
DJ
DH
100
--
EP
EK
EJ
EH
200
--
FP *
FK *
FJ
FH
400
--
--
HK
HJ
HH
*
Standard part number.
All other types available only on request.
10
- Critical dv/dt:
None
L
= 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
4
www.irf.com
ST173S Series
Bulletin I25181 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
(0
.3
9 .5
MI
N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER
10 (0.39)
C.S. 0.4mm 2
RED CATHODE
(0.0006 s.i.)
WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD
C.S. 25mm 2
(0
. 86
)M
IN
.
Fast-on Terminals
+I
210 (8.26)
AMP. 280000-1
REF-250
90 (3.54) MIN.
RED SHRINK
220 (8.66)
+
10 (0.39)
-
WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A *
35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
www.irf.com
5
Embedded System
京公网安备 11010802033920号
EEWORLD
