Preliminary
Data Sheet
PS9306L,PS9306L2
0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
R08DS0017EJ0100
Rev.1.00
Nov 10, 2011
DESCRIPTION
The PS9306L and PS9306L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9306L and PS9306L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9306L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9306L and PS9306L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9306L is lead bending type (Gull-wing) for surface mounting.
The PS9306L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
•
•
•
•
•
•
•
•
Long creepage distance (8 mm MIN.: PS9306L2)
Half size of 8-pin DIP
Peak output current (0.6 A MAX., 0.4 A MIN.)
High speed switching (t
PLH
,
t
PHL
= 0.4
μ
s MAX.)
High common mode transient immunity (CM
H
, CM
L
=
±25
kV/
μ
s MIN.)
Embossed tape product : PS9306L-E3, PS9306L2-E3: 2 000 pcs/reel
Pb-Free product
Safety standards
•
UL approved: No. E72422
•
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
•
SEMKO approved: No. 1115598
•
DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
PIN CONNECTION
(Top View)
6
5
4
1. Anode
2. NC
3. Cathode
4. V
EE
5. V
O
6. V
CC
<R>
1
2
3
APPLICATIONS
•
IGBT, Power MOS FET Gate Driver
•
Industrial inverter
•
IH (Induction Heating)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
SHIELD
Page 1 of 19
PS9306L,PS9306L2
Chapter Title
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Diode
Parameter
Forward Current
Peak Transient
Forward Current
(Pulse Width < 1
μ
s)
Reverse Voltage
Power Dissipation
*1
Detector
High Level Peak
*2
Output Current
Symbol
I
F
I
F (TRAN)
Ratings
25
1.0
Unit
mA
A
V
R
P
D
I
OH (PEAK)
I
OL (PEAK)
(V
CC
−V
EE
)
V
O
P
C
BV
f
T
A
T
stg
5
45
0.6
0.6
0 to 35
0 to V
CC
250
5 000
50
−40
to +110
−55
to +125
V
mW
A
A
V
V
mW
Vr.m.s.
kHz
°C
°C
Low Level Peak
*2
Output Current
Supply Voltage
Output Voltage
Power Dissipation
*3
Isolation Voltage
*4
Operating Frequency
*5
Operating Ambient Temperature
Storage Temperature
Notes: *1.
*2.
*3.
*4.
Reduced to 1.2 mW/°C at T
A
= 85°C or more.
Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%
Reduced to 4.5 mW/°C at T
A
= 65°C or more.
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
*5. I
OH (PEAK)
≤
0.4 A (≤ 2.0
μ
s), I
OL (PEAK)
≤
0.4 A (≤ 2.0
μ
s)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Forward Current (ON)
Forward Voltage (OFF)
Operating Ambient Temperature
Symbol
(V
CC
−V
EE
)
I
F (ON)
V
F (OFF)
T
A
MIN.
10
8
−2
−40
TYP.
MAX.
30
12
0.8
110
Unit
V
mA
V
°C
R08DS0017EJ0100 Rev.1.00
Nov 10, 2011
Page 5 of 19
Embedded System
京公网安备 11010802033920号
EEWORLD
