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IRFE220-JQR-BE4

Description
Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15
CategoryDiscrete semiconductor    The transistor   
File Size71KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

IRFE220-JQR-BE4 Overview

Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15

IRFE220-JQR-BE4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionCHIP CARRIER, R-CQCC-N15
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance0.92 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CQCC-N15
JESD-609 codee4
Number of terminals15
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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