2N6292LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6292LEADFREE: DescriptionPower Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size345KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6292LEADFREE Overview

Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2N6292LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	70 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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2N6107 2N6109 2N6111

2N6288 2N6290 2N6292

PNP

NPN

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6107, 2N6288

series types are complementary silicon power transistors,

manufactured by the epitaxial base process, designed

for general purpose power amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

2N6111 2N6109 2N6107

SYMBOL 2N6288 2N6290 2N6292

VCBO

40

60

80

VCEO

30

50

70

VEBO

5.0

IC

7.0

ICM

10

IB

3.0

PD

40

TJ, Tstg

-65 to +150

Θ

JC

3.13

MAX

100

2.0

1.0

30

50

70

3.5

3.0

30

2.3

20

4.0

250

150

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICEV

VCE=Rated VCEO, VEB=1.5V

ICEV

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

hfe

fT

Cob

VCE=Rated VCEO, VEB=1.5V, TC=150°C

VCE=20V (2N6111, 2N6288)

VCE=40V (2N6109, 2N6290)

VCE=60V (2N6107, 2N6292)

VEB=5.0V

IC=100mA (2N6111, 2N6288)

IC=100mA (2N6109, 2N6290)

IC=100mA (2N6107, 2N6292)

IC=7.0A, IB=3.0A

VCE=4.0V, IC=7.0A

VCE=4.0V, IC=2.0A (2N6107, 2N6292)

VCE=4.0V, IC=2.5A (2N6109, 2N6290)

VCE=4.0V, IC=3.0A (2N6111, 2N6288)

VCE=4.0V, IC=7.0A

VCE=4.0V, IC=0.5A, f=50kHz

VCE=4.0V, IC=0.5A, f=1.0MHz

VCB=10V, IE=0, f=1.0MHz

UNITS

μA

mA

V

MHz

pF

R1 (10-April 2013)

2N6292LEADFREE Related Products

	2N6292LEADFREE	2N6290LEADFREE	2N6109LEADFREE	2N6111LEADFREE	2N6288LEADFREE	2N6107LEADFREE
Description	Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
Contacts	3	3	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	7 A	7 A	7 A	7 A	7 A	7 A
Collector-emitter maximum voltage	70 V	50 V	50 V	30 V	30 V	70 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	30	30
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	PNP	PNP	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz
Base Number Matches	1	1	1	1	1	1

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