JANTX2N6338 datasheet, PDF - EEWORLD Datasheet

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JANTX2N6338: DescriptionPower Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTX2N6338 Overview

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,

JANTX2N6338 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	2078571964
Parts packaging code	TO-3
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-204
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
Guideline	MIL-19500/509
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz

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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/509

Devices

2N6338

2N6341

Qualified Level

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation

(1)

Symbol

CEO

CBO

EBO

stg

Symbol

2N6338

100

120

2N6341

150

180

Unit

Vdc

Adc

@ T

= +25

@ T

= +100

Operating & Storage Junction Temperature Range

6.0

200

112

-65 to +175

Max.

0.875

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Derate linearly 1.14 W/ C for T

= +25 C and T

= +200

TO-3*

(TO-204AA)

Unit

C/W

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 50 mAdc

Collector-Emitter Cutoff Current

= 50 Vdc

= 75 Vdc

Collector-Emitter Cutoff Current

= 100 Vdc, V

= 1.5 Vdc

= 150 Vdc, V

= 1.5 Vdc

Emitter-Base Cutoff Current

= 6.0 Vdc

Collector-Base Cutoff Current

= 120 Vdc

= 180 Vdc

2N6338

2N6341

2N6338

2N6341

2N6338

2N6341

(BR)

CEO

100

150

Vdc

CEO

µAdc

CEX

EBO

100

µAdc

2N6338

2N6341

CEO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANTX2N6338 Related Products

	JANTX2N6338	JANTX2N6341	JANTXV2N6341	JANTXV2N6338
Description	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-3	TO-3	TO-3	TO-3
Contacts	2	2	2	2
Reach Compliance Code	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A	10 A
Collector-emitter maximum voltage	100 V	150 V	150 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30
JEDEC-95 code	TO-204	TO-204	TO-204	TO-204
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	200 W	200 W	200 W	200 W
Certification status	Not Qualified	Qualified	Qualified	Not Qualified
Guideline	MIL-19500/509	MIL-19500/509	MIL-19500/509	MIL-19500/509
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz	40 MHz
Objectid	2078571964	-	2078586982	2078586979

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