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JANTXV2N6338

Description
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size53KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N6338 Overview

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,

JANTXV2N6338 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2078586979
Parts packaging codeTO-3
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-204
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
GuidelineMIL-19500/509
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509
Devices
2N6338
2N6341
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
Symbol
0
2N6338
100
120
2N6341
150
180
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
@ T
A
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
6.0
10
25
200
112
-65 to +175
Max.
0.875
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
R
θ
JC
Derate linearly 1.14 W/ C for T
C
= +25 C and T
C
= +200
0
C
0
0
TO-3*
(TO-204AA)
Unit
C/W
*See appendix A for
package outline
1)
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
V
CE
= 75 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
V
CE
= 150 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 180 Vdc
2N6338
2N6341
2N6338
2N6341
2N6338
2N6341
V
(BR)
CEO
100
150
50
Vdc
I
CEO
µAdc
I
CEX
I
EBO
10
10
100
10
10
µAdc
µAdc
µAdc
2N6338
2N6341
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANTXV2N6338 Related Products

JANTXV2N6338 JANTX2N6338 JANTX2N6341 JANTXV2N6341
Description Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code TO-3 TO-3 TO-3 TO-3
Contacts 2 2 2 2
Reach Compliance Code unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 100 V 100 V 150 V 150 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30
JEDEC-95 code TO-204 TO-204 TO-204 TO-204
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 200 W 200 W 200 W 200 W
Certification status Not Qualified Not Qualified Qualified Qualified
Guideline MIL-19500/509 MIL-19500/509 MIL-19500/509 MIL-19500/509
surface mount NO NO NO NO
Terminal surface TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz 40 MHz
Objectid 2078586979 2078571964 - 2078586982

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