datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> JANTX2N6341
PDF
Preview

JANTX2N6341

Description
Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size53KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

JANTX2N6341 Online Shopping

Suppliers Part Number Price MOQ In stock  
JANTX2N6341 - - View Buy Now

JANTX2N6341 Overview

Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,

JANTX2N6341 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeTO-3
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-204
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
Certification statusQualified
GuidelineMIL-19500/509
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1

Preview

Download Datasheet
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509
Devices
2N6338
2N6341
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
Symbol
0
2N6338
100
120
2N6341
150
180
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
@ T
A
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
6.0
10
25
200
112
-65 to +175
Max.
0.875
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
R
θ
JC
Derate linearly 1.14 W/ C for T
C
= +25 C and T
C
= +200
0
C
0
0
TO-3*
(TO-204AA)
Unit
C/W
*See appendix A for
package outline
1)
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
V
CE
= 75 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
V
CE
= 150 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 180 Vdc
2N6338
2N6341
2N6338
2N6341
2N6338
2N6341
V
(BR)
CEO
100
150
50
Vdc
I
CEO
µAdc
I
CEX
I
EBO
10
10
100
10
10
µAdc
µAdc
µAdc
2N6338
2N6341
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANTX2N6341 Related Products

JANTX2N6341 JANTX2N6338 JANTXV2N6341 JANTXV2N6338
Description Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code TO-3 TO-3 TO-3 TO-3
Contacts 2 2 2 2
Reach Compliance Code compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 150 V 100 V 150 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30
JEDEC-95 code TO-204 TO-204 TO-204 TO-204
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 200 W 200 W 200 W 200 W
Certification status Qualified Not Qualified Qualified Not Qualified
Guideline MIL-19500/509 MIL-19500/509 MIL-19500/509 MIL-19500/509
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz 40 MHz
Objectid - 2078571964 2078586982 2078586979

Recommended Resources

Circuit structure of audio AD converter

Basic structure of DA converter

Street light control circuit 7

Dimming light circuit using parametric solid state relay

Working principle diagram of DC transformer

Computer motherboard circuit diagram 810 3_27

xpe remote desktop problem
I use xpe for development. A user needs to use the remote desktop connection under Start All Programs, Accessories, and Communications to log in to the service to work. What component is used for this...
26`87765 Embedded System
Why does the temperature of the same location tested by the wireless transceiver program of eZ430-RF2500 differ by several degrees?
:Sweat:...
caoqing Microcontroller MCU
EEWORLD New Year Guessing Contest with Prizes invites you to pose questions!
[align=left][size=4]To be honest, the recent top-level competitions, millionaires, cheese superman and other prize-winning guessing activities are really popular! People like Guan Guan who are busy wi...
okhxyyo Talking
LIS2DE12MEMS digital output motion sensor ultra-low power high performance 3-axis "femto" accelerometer datasheet
The LIS2D MEMS digital output motion sensor is a 3-axis MEMS digital output accelerometer sensor. These devices have ultra-low power consumption with embedded functions and have the same pinout, belon...
littleshrimp MEMS sensors
Chapter7 Analog-to-digital converter ADC12_A
ADC12_A realizes 12 channels of individually configurable analog-to-digital conversion, with a resolution of 12 bits and a conversion rate of up to 200KSPS. 　　The conversion clock source can be select...
灞波儿奔 Microcontroller MCU
Power-off protection circuit design
I am designing a circuit recently. When the microcontroller is reset, the DA output will lose power, but the time is very short. I want to design a circuit that can protect it from powering down durin...
zizimolan Embedded System
Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. RM242-060-501-9115
  2. 162GB36TG1608SW044416
  3. REC124MT15-16
  4. TMM-109-05-H-D-SM-09-P-M-A
  5. CRT0603-CV-6R81ELF
  6. GUB-GL8ALF-03-4071-C-A
  7. HM3104-A1P1-6F
  8. FMD-1A-2NG901PVH
  9. AME8550AEEVD360L
  10. 2N7002K-AU_SY_00001
  11. 201007F4750T4E
  12. 1210W2F1620T5E

Popular Articles

  1. SmartSens launches a full range of upgraded CMOS image sensors: SC2336 and SC3336
  2. Baidu Kunlun chips have been put into use for more than 20,000 pieces, and both generations of products have been successfully taped out at the first time
  3. Wang Guoping, the director of the expert committee and core technical personnel of Huarun Microelectronics, has resigned
  4. How to choose a cable fault tester?
  5. mini2440 bare metal program TopPoly 3.5 LCD driver TopPoly-TD035STED4
  6. 3C certification shows that Xiaomi 12 Pro may support 120W fast charging
  7. Ni Guangnan: We can focus on RISC-V architecture and take the initiative in the development of the chip industry
  8. ZeroBeam Technology and Qualcomm have reached a strategic cooperation to create a new digital experience for smart cars
  9. SK Hynix Completes First Phase of Acquisition of Intel’s NAND Flash and SSD Business
  10. How did Apple design AirPods 3?

Technical ResourceMore

  1. C language practice 105 source code examples
  2. LabVIEW Beverage Machine Design
  3. Database Principles and Applications, Download
  4. Research on PSD weighing system based on embedded ARM7 and μClinux
  5. Tongyu Communication Agilent N9360A Mobile Phone Comprehensive Test Seminar
  6. MAC97A8_MAC97A6 pdf
  7. Laser liquid level monitoring and alarm simulation system
  8. Vibrator inspection standards
  9. Solutions to improve the visual refresh rate of scanning screens
  10. Single chip microcomputer - principle, operation, experiment and application

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 597  6  2869  2850  2400  13  1  58  49  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号