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P0389WC04C

Description
Silicon Controlled Rectifier, 650000mA I(T), 400V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size2MB,12 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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P0389WC04C Overview

Silicon Controlled Rectifier, 650000mA I(T), 400V V(DRM),

P0389WC04C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instruction,
Reach Compliance Codecompliant
Nominal circuit commutation break time15 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current30 mA
On-state non-repetitive peak current5500 A
Maximum on-state current650000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage400 V
Trigger device typeSCR
Date:- 03 August 2012
Data Sheet Issue:- K1
Fast Turn-off Thyristor
Types P0389WC04# & P0389WC08#
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
400-800
400-800
400-800
500-900
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
FGM
I
FGM
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
I
2
t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power (100µs pulse width)
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
389
150
780
650
5000
5500
125×10
3
151×10
3
500
1000
12
18
5
1.5
60
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
2
s
A
2
s
A/µs
A/µs
V
A
V
W
W
V
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=80% V
DRM
, I
FG
=1A, t
r
≤1µs,
T
case
=125°C.
7)
Rated V
DRM
.
Data Sheet. Types P0389WC04#-08# Issue K1
Page 1 of 12
August 2012
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