BDY90
MECHANICAL DATA
Dimensions in mm (inches)
NPN SILICON TRANSISTOR
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
FEATURES
•
•
22.23
(0.875)
max.
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
0.97 (0.060)
1.10 (0.043)
•
V
(BR)CEO
= 100V (Min)
Hermetically Sealed TO3 Metal
Package
Screening Options Available
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
•
Linear & Switching
Applications
TO3 (TO-204AA)
1 = Base
2 = Emitter
Case = Collector
ABSOLUTE MAXIMUM RATINGS (
T
c
= 25°C unless otherwise stated)
V
CEO
V
CEV
V
CBO
V
EBO
I
C
I
B
P
D
T
J
T
stg
Collector - Emitter Voltage
Collector - Emitter Voltage (V
BE
= -1.5V)
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation at
T
C
= 25°C
Derate Above 25°C
Junction Temperature
Storage Temperature
100V
120V
120V
6V
10A
15A
2A
60W
0.4W/°C
175°C
-65 to +175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DOC 8018, ISS 1
BDY90
THERMAL CHARACTERISTICS
R
θ
JC
Thermal resistance junction to case
Max
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
Parameter
V
(BR)CEO
*
I
CEV
I
EBO
I
CBO
h
FE
*
Collector-Emitter Breakdown Voltage
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
Collector-Base Cut-Off Current
C
=25°C unless otherwise stated)
Test Conditions
I
C
= 10mA
V
CE
= 120V
I
C
= 0
I
E
= 0
I
C
= 1.0A
I
C
= 5.0A
I
C
= 10A
I
C
= 5A
I
C
= 10A
I
C
= 5A
I
C
= 10A
I
B
= 0
V
BE
= -1.5V
T
C
= 150°C
V
EB
= 6V
V
CB
= 120V
V
CE
= 2V
V
CE
= 5V
V
CE
= 5V
I
B
= 500mA
I
B
= 1.0A
I
B
= 500mA
I
B
= 1.0A
Min. Typ. Max.
100
1.0
3
1.0
1.0
30
30
20
0.5
1.5
1.2
1.5
120
Unit
V
mA
Forward-current transfer ratio
V
CE(sat)
*
V
BE(sat)
*
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturated Voltage
DYNAMIC CHARACTERISTICS
f
T
C
obo
t
on
t
s
t
f
Transition Frequency
I
C
= 500mA
f = 10MHz
I
E
= 0
f = 1.0MHz
Turn-On Time
Storage Time
Fall Time
V
CC
= 30V
I
C
= 5A
V
CC
= 30V
I
C
= 5A
I
B1
= -I
B2
= 0.5A
I
B1
= 0.5A
0.35
1.3
0.2
µs
V
CB
= 10V
V
CE
= 5V
20
MHz
Output Capacitance
200
pF
* Pulse test t
p
= 300µs,
δ
< 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DOC 8018, ISS 1
Analog electronics
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