SFU1N60N
Silicon N-Channel MOSFET
Features
■1A,600V, R
DS(on)
(Max 15.0Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
G
D
S
TO251
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note 2)
(Note 1)
(Note 3)
(Note1)
Parameter
Value
600
1.0
0.62
4.0
±30
47
3.1
4.5
30
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
0.5
-
Value
Typ
-
-
-
Max
4.16
-
105
Units
℃/W
℃/W
℃/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P01-3
SFU1N60N
Electrical Characteristics (Tc = 25°C)
25°
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Q
g
Q
gs
Q
gd
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
ΔBV
DSS
/
ΔT
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
°
VDS = 480 V, Tc = 125°C
ID = 250 μA, VGS = 0 V
I
D
=250μA, Referenced to 25
℃
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =0.5A
VDS = 50 V, ID =0.5A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =300 V,
ID = 1 A
RG=25 Ω
(Note4,5)
VDD = 480 V,
VGS = 10 V,
Min
-
±30
-
-
600
-
2
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
0.5
-
11
0.8
178
19
3.7
15
46
26
37
6.1
1.0
3.0
Max
±100
-
10
100
-
-
4
15
-
221
27
4.8
45
105
Unit
nA
V
μA
μA
V
V/
℃
V
Ω
S
pF
ns
62
82
7.2
nC
ID = 1 A
(Note4,5)
-
-
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Source−
25°
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
-
-
IDR = 1A, VGS = 0 V
IDR = 1A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
-
185
0.51
Max
1.0
4.0
1.0
-
-
Unit
A
A
V
ns
μC
Note
1.Repeativity rating :pulse width limited by junction temperature
2.L=59mH,I
AS
=1A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
3.I
SD
≤1A,di/dt≤200A/us, V
DD
<BV
DSS
,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
SFU1N60N
Fig. 1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.4 On-State Current vs
Allowable Case Temperature
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
3/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
SFU1N60N
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
SFU1N60N
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
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