HYB39S256400T-7.5 datasheet, PDF

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HYB39S256400T-7.5: DescriptionSynchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54; Categorystorage storage; File Size317KB，47 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYB39S256400T-7.5 Overview

Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54

HYB39S256400T-7.5 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	54
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8
Maximum standby current	0.002 A
Maximum slew rate	0.27 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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HYB 39S256400/800/160T

256-MBit Synchronous DRAM

• High Performance:

• Multiple Burst Read with Single Write

Operation

-8A

125

-8B

100

Units

MHz

• Automatic and Controlled Precharge

Command

• Data Mask for Read/Write Control (x4, x8)

• Data Mask for Byte Control (x16)

• Auto Refresh (CBR) and Self Refresh

• Suspend Mode and Power Down Mode

• 8192 Refresh Cycles / 64 ms (7.8

µs)

• Random Column Address every CLK

(1-N Rule)

• Single 3.3 V

0.3 V Power Supply

• LVTTL Interface

• Plastic Packages:

P-TSOPII-54 400mil width (x4, x8, x16)

• -7.5

-8

-8A

-8B

parts

for PC133 3-3-3 operation

for PC100 2-2-2 operation

for PC100 3-2-2 operation

for PC100 3-2-3 operation

-7.5

-8

125

CK3

AC3

CK2

AC2

133

7.5

5.4

• Fully Synchronous to Positive Clock Edge

• 0 to 70

°C

operating temperature

• Four Banks controlled by BA0 & BA1

• Programmable CAS Latency: 2 & 3

• Programmable Wrap Sequence: Sequential

or Interleave

• Programmable Burst Length: 1, 2, 4, 8

The HYB 39S256400/800/160T are four bank Synchronous DRAM’s organized as

4 banks

16MBit x4, 4 banks

8MBit x8 and 4 banks

4Mbit x16 respectively. These synchro-

nous devices achieve high speed data transfer rates for CAS-latencies by employing a chip

architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

The chip is fabricated using the Infineon advanced 256 MBit DRAM process technology.

The device is designed to comply with all industry standards set for synchronous DRAM products,

both electrically and mechanically. All of the control, address, data input and output circuits are

synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleave fashion allows random access operation to occur

at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of is

possible depending on burst length, CAS latency and speed grade of the device.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a

single 3.3 V

0.3 V power supply and are available in TSOPII packages.

Data Book

12.99

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