PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1.
Product overview
Package
NXP
PESD5V0S1UA
PESD12VS1UA
SOD323
JEITA
SC-76
single
Configuration
Type number
1.2 Features
I
Transient Voltage Suppression (TVS)
protection of one line
I
Max. peak pulse power: P
PP
= 890 W
I
Low clamping voltage: V
CL
= 19 V
I
Low leakage current: I
RM
= 300 nA
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5 (surge); I
PP
= 47 A
I
AEC-Q101 qualified
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Medical and industrial equipment
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD5V0S1UA
PESD12VS1UA
C
d
diode capacitance
PESD5V0S1UA
PESD12VS1UA
f = 1 MHz; V
R
= 0 V
-
-
480
160
530
180
pF
pF
-
-
-
-
5
12
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0S1UA
PESD12VS1UA
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 5.
Marking codes
Marking code
AV
AW
Type number
PESD5V0S1UA
PESD12VS1UA
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD5V0S1UA
PESD12VS1UA
I
PP
peak pulse current
PESD5V0S1UA
PESD12VS1UA
t
p
= 8/20
µs
[1][2]
Conditions
t
p
= 8/20
µs
[1][2]
Min
-
-
-
-
Max
890
600
47
22.5
Unit
W
W
A
A
PESD5V0S1UA_PESD12VS1UA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 February 2009
2 of 14
NXP Semiconductors
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[3]
[4]
Min
-
-
-
−55
−65
Max
360
500
150
+150
+150
Unit
mW
mW
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Soldering point of cathode tab.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
-
Max
30
400
16
Unit
kV
V
kV
Table 8.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD5V0S1UA_PESD12VS1UA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 February 2009
3 of 14
NXP Semiconductors
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 9.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
345
250
90
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
PESD5V0S1UA_PESD12VS1UA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 February 2009
4 of 14
NXP Semiconductors
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
7. Characteristics
Table 10. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD5V0S1UA
PESD12VS1UA
I
RM
reverse leakage current
PESD5V0S1UA
PESD12VS1UA
V
BR
breakdown voltage
PESD5V0S1UA
PESD12VS1UA
C
d
diode capacitance
PESD5V0S1UA
PESD12VS1UA
V
CL
clamping voltage
PESD5V0S1UA
I
PP
= 47 A
I
PP
= 25 A
I
PP
= 5 A
PESD12VS1UA
I
PP
= 22.5 A
I
PP
= 15 A
I
PP
= 5 A
r
dif
differential resistance
PESD5V0S1UA
PESD12VS1UA
[1]
[1]
Conditions
Min
-
-
Typ
-
-
0.3
<1
6.8
14.5
Max
5
12
4
100
7.3
15.75
Unit
V
V
µA
nA
V
V
V
RWM
= 5 V
V
RWM
= 12 V
I
R
= 5 mA
-
-
6.2
13.3
f = 1 MHz;
V
R
= 0 V
-
-
-
-
-
-
-
-
-
-
480
160
-
-
-
-
-
-
2
5
530
180
19
13.5
9.8
27
23.5
19
100
100
pF
pF
V
V
V
V
V
V
Ω
Ω
I
R
= 5 mA
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
PESD5V0S1UA_PESD12VS1UA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 February 2009
5 of 14
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