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AR2512

Description
25 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size79KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

AR2512 Overview

25 A, 50 V, SILICON, RECTIFIER DIODE

AR2512 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PEDB-N2
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PEDB-N2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current5 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
AR2500 - AR2512
PRV : 50 - 1200 Volts
Io : 25 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
AUTOMOTIVE
RECTIFIER DIODES
BUTTON CASE
5
°
NOM
0.410 (10.4)
0.380 (9.70)
0.250 (6.4)
0.235 (6.0)
0.185 (4.7)
0.165 (4.2)
MECHANICAL DATA :
*
*
*
*
*
*
Case : Molded plastic
Epoxy : UL94V-O rate flame retardant
Terminals : Terminal are readily solderable
Polarity : Cathode polarity band
Mounting position : Any
Weight : 1.80 grams
0.225 (5.7)
0.215 (5.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current Tc = 150°C
Peak Forward Surge Current Single half sine
wave superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 25 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Thermal Resistance (Note 1)
Junction Temperature Range
Storage Temperature Range
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
R
ӨJC
T
J
T
STG
AR
2500
50
35
50
AR
2501
100
70
100
AR
2502
200
140
200
AR
2504
400
280
400
AR
2506
600
420
600
25
AR
2508
800
560
800
AR
2510
1000
700
1000
AR
UNIT
2512
1200
840
1200
V
V
V
A
A
V
μA
mA
°C/W
°C
°C
400
1.0
5.0
1.0
0.8
- 65 to + 175
- 65 to + 175
Note
: (1) Thermal resistance from junction to case. Single side cooled.
Page 1 of 2
Rev. 03 : March 14, 2006

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Description 25 A, 50 V, SILICON, RECTIFIER DIODE 25 A, 50 V, SILICON, RECTIFIER DIODE 25 A, 50 V, SILICON, RECTIFIER DIODE 25 A, 100 V, SILICON, RECTIFIER DIODE AUTOMOTIVE RECTIFIER 25 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 600 V, SILICON, RECTIFIER DIODE 25 A, 800 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to - conform to conform to conform to conform to conform to conform to
package instruction O-PEDB-N2 O-PEDB-N2 - O-PEDB-N2 - O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 -
Reach Compliance Code compli compli - compli compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V - 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code O-PEDB-N2 O-PEDB-N2 - O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Maximum non-repetitive peak forward current 400 A 400 A - 400 A 400 A 400 A 400 A 400 A 400 A
Number of components 1 1 - 1 1 1 1 1 1
Phase 1 1 - 1 1 1 1 1 1
Number of terminals 2 2 - 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C - 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C - -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 25 A 25 A - 25 A 25 A 25 A 25 A 25 A 25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON - DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 1200 V 50 V - 100 V 200 V 400 V 600 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA - 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount YES YES - YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END - END END END END END END
Base Number Matches 1 1 - 1 - - 1 - 1
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