AR2510 datasheet, PDF - EEWORLD Datasheet

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AR2510: Description25 A, 1000 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size79KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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AR2510 Overview

25 A, 1000 V, SILICON, RECTIFIER DIODE

AR2510 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	25 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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AR2500 - AR2512

PRV : 50 - 1200 Volts

Io : 25 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

AUTOMOTIVE

RECTIFIER DIODES

BUTTON CASE

NOM

0.410 (10.4)

0.380 (9.70)

0.250 (6.4)

0.235 (6.0)

0.185 (4.7)

0.165 (4.2)

MECHANICAL DATA :

Case : Molded plastic

Epoxy : UL94V-O rate flame retardant

Terminals : Terminal are readily solderable

Polarity : Cathode polarity band

Mounting position : Any

Weight : 1.80 grams

0.225 (5.7)

0.215 (5.5)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Average Rectified Forward Current Tc = 150°C

Peak Forward Surge Current Single half sine

wave superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at I

= 25 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Thermal Resistance (Note 1)

Junction Temperature Range

Storage Temperature Range

Ta = 25

°C

Ta = 100

°C

SYMBOL

RRM

RMS

F(AV)

FSM

R(H)

ӨJC

STG

2500

2501

100

2502

200

140

200

2504

400

280

400

2506

600

420

600

2508

800

560

800

2510

1000

700

1000

UNIT

2512

1200

840

1200

μA

°C/W

°C

400

1.0

5.0

1.0

0.8

- 65 to + 175

Note

: (1) Thermal resistance from junction to case. Single side cooled.

Page 1 of 2

Rev. 03 : March 14, 2006

AR2510 Related Products

	AR2510	AR2500	AR2500_06	AR2501	AR2502	AR2504	AR2506	AR2508	AR2512
Description	25 A, 1000 V, SILICON, RECTIFIER DIODE	25 A, 50 V, SILICON, RECTIFIER DIODE	25 A, 50 V, SILICON, RECTIFIER DIODE	25 A, 100 V, SILICON, RECTIFIER DIODE	AUTOMOTIVE RECTIFIER	25 A, 400 V, SILICON, RECTIFIER DIODE	25 A, 600 V, SILICON, RECTIFIER DIODE	25 A, 800 V, SILICON, RECTIFIER DIODE	25 A, 50 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	-	compli	compli	compli	compli	compli	compli
Other features	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	-	1 V	1 V	1 V	1 V	1 V	1 V
JESD-30 code	O-PEDB-N2	O-PEDB-N2	-	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Maximum non-repetitive peak forward current	400 A	400 A	-	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	1	1	-	1	1	1	1	1	1
Phase	1	1	-	1	1	1	1	1	1
Number of terminals	2	2	-	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	-	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	25 A	25 A	-	25 A	25 A	25 A	25 A	25 A	25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	1000 V	50 V	-	100 V	200 V	400 V	600 V	800 V	1200 V
Maximum reverse current	5 µA	5 µA	-	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	YES	YES	-	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	-	END	END	END	END	END	END
Base Number Matches	1	1	-	1	-	-	1	-	1
package instruction	-	O-PEDB-N2	-	O-PEDB-N2	-	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2

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