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RS1MLR2

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size373KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

RS1MLR2 Overview

Rectifier Diode

RS1MLR2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codenot_compliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperature30
RS1AL thru RS1ML
Taiwan Semiconductor
CREAT BY ART
Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.8 A
Maximum reverse current @ rated VR T
J
=25
T
J
=125
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θjL
R
θjA
T
J
T
STG
150
32
105
- 55 to +150
- 55 to +150
SYMBOL
RS1
AL
RAL
50
35
50
RS1
BL
RBL
100
70
100
RS1
DL
RDL
200
140
200
RS1
GL
RGL
400
280
400
0.8
30
1.3
5
50
10
250
500
O
RS1
JL
RJL
600
420
600
RS1
KL
RKL
800
560
800
RS1
ML
RML
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
ns
C/W
O
O
C
C
Document Number: DS_D1405034
Version: K14

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