EEWORLDEEWORLDEEWORLD

Part Number

Search

DDA123JU-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size101KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDA123JU-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6

DDA123JU-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SPICE MODEL: DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA143TU DDA114TU
DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams &
Page 3)
Ordering Information (See Page 3)
Weight: 0.006 grams (approx.)
P/N
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
R1
22KW
47KW
10KW
2.2KW
10KW
1KW
4.7KW
10KW
R2
22KW
47KW
47KW
47KW
10KW
¾
¾
¾
MARKING
P17
P20
P14
P06
P13
P01
P07
P12
J
K
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
All
Value
50
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100
-100
200
625
Unit
V
Characteristic
Output Current
Output Current
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
3. No purposefully added lead.
DS30346 Rev. 5 - 2
1 of 5
www.diodes.com
PXX YM
PXX YM
G
H
D
F
·
·
·
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 3)
A
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
C
D
F
M
0.65 Nominal
H
J
K
L
M
a
L
All Dimensions in mm
R
1
R
2
R
2
R
1
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM
V
IN
V
I
O
mA
I
C
(Max)
P
d
R
qJA
mA
mW
°C/W
DDA (xxxx) U
ã
Diodes Incorporated

DDA123JU-13 Related Products

DDA123JU-13 DDA114YU-13 DDA143TU-13 DDA144EU-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Diodes Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.07 A 0.1 A 0.03 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 68 100 68
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 e0 e0 e0
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
I would like to ask you for an assembly statement, thank you! Waiting online
[i=s] This post was last edited by dontium on 2015-1-23 13:38 [/i] I use 2812 and have been writing programs in C language. Recently, I need to make a digital filtering program, so I need to write it ...
christina.feng Analogue and Mixed Signal
How to port open CV to winCE based on arm
I am new to Windows CE and I don't know anything. I would like to ask an expert. I have generated an arm-based Windows CE6 under VS2005, and now I want to install Open CV. Which version of Open CV sho...
你的初吻奶嘴 Embedded System
Are there any good looking buttons on wince?
Can the button be set to be flat?...
xuyangsuccess Embedded System
ADI designs RF transceivers for GSM and GPRS wireless handsets
Analog Devices, Inc. has introduced a chip that can reduce the RF circuit of a cellular phone to 1.5 square centimeters. This new Othello-G RF chip suitable for GSM/GPRS communication standards can pr...
JasonYoo RF/Wirelessly
Has anyone in the forum played with stm32 driving emmc?
As the title says, I am working on the emmc driver now. I saw that it is driven by sdio. This driver is very difficult to use. Can I ask for help? Or you can tell me the principle. I looked it up onli...
长得帅怪我落 stm32/stm8
A question about how to expand a 32K*4 dynamic RAM memory chip to a 128K*8 memory chip. Please answer.
1. Suppose a computer needs to use 32K*4 dynamic RAM memory chips to expand the memory of 128K*8. Please answer: (1) How many RAM chips are needed to expand the memory system? (2) How many data lines ...
huangnian Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2485  2688  2105  1297  2842  51  55  43  27  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号