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DDA143TU-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size101KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDA143TU-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6

DDA143TU-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SPICE MODEL: DDA124EU DDA144EU DDA114YU DDA123JU DDA114EU DDA143TU DDA114TU
DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams &
Page 3)
Ordering Information (See Page 3)
Weight: 0.006 grams (approx.)
P/N
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
R1
22KW
47KW
10KW
2.2KW
10KW
1KW
4.7KW
10KW
R2
22KW
47KW
47KW
47KW
10KW
¾
¾
¾
MARKING
P17
P20
P14
P06
P13
P01
P07
P12
J
K
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA113TU
DDA143TU
DDA114TU
All
Value
50
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100
-100
200
625
Unit
V
Characteristic
Output Current
Output Current
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
3. No purposefully added lead.
DS30346 Rev. 5 - 2
1 of 5
www.diodes.com
PXX YM
PXX YM
G
H
D
F
·
·
·
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 3)
A
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
C
D
F
M
0.65 Nominal
H
J
K
L
M
a
L
All Dimensions in mm
R
1
R
2
R
2
R
1
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM
V
IN
V
I
O
mA
I
C
(Max)
P
d
R
qJA
mA
mW
°C/W
DDA (xxxx) U
ã
Diodes Incorporated

DDA143TU-13 Related Products

DDA143TU-13 DDA114YU-13 DDA123JU-13 DDA144EU-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Diodes Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.07 A 0.1 A 0.03 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 68 80 68
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 e0 e0 e0
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz

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