MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
•
Collector – Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
•
Collector Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B
VCEO(sus)
= 100 Vdc (Min) — BD243C, BD244C
•
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
•
Compact TO–220 AB Package
BD243B
BD243C*
PNP
BD244B
BD244C*
*Motorola Preferred Device
NPN
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
BD243B
BD244B
80
80
BD243C
BD244C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 – 100 VOLTS
65 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
6
10
Collector Current — Continuous
Peak
Base Current
2.0
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
Watts
W/
_
C
65
0.52
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_
C
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.92
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
3–178
Motorola Bipolar Power Transistor Device Data
BD243B BD243C BD244B BD244C
t, TIME (
µ
s)
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ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc IB = 0)
mAdc,
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Symbol
Min
80
100
—
Max
—
—
Unit
Vdc
VCEO(sus)
BD243B BD244B
BD243B,
BD243C, BD244C
ICEO
ICES
0.7
mAdc
µAdc
BD243B, BD243C, BD244B, BD244C
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
BD243B, BD244B
BD243C, BD244C
—
—
—
400
400
1.0
IEBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
—
30
15
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
Base–Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VCE(sat)
VBE(on)
1.5
2.0
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
fT
3.0
20
—
—
MHz
—
hfe
(1) Pulse Test: Pulsewidth
(2) fT = hfe
•
ftest
v
300
µs,
Duty Cycle
v
2.0%.
VCC
– 30 V
25
µs
+ 11 V
0
– 9.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
RB
RC
SCOPE
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
v
51
–4V
D1
td @ VBE(off) = 5.0 V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
[
[
0.03
0.02
0.06
0.1
1.0
0.2
0.4 0.6
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
3–179
BD243B BD243C BD244B BD244C
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
0.05
0.02
t1
SINGLE PULSE
t2
SINGLE
PULSE
P(pk)
R
θJC(max)
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
D = 0.5
0.2
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10
5.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 150°C
1.0
0.5
0.3
0.2
0.1
5.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
BD243B, BD244B
BD243C, BD244C
10
20
60
40
80
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
1.0
ms
5.0 ms
0.5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
Figure 5. Active Region Safe Operating Area
5.0
3.0
2.0
1.0
t, TIME (
µ
s)
0.7
0.5
0.3
0.2
tf
0.1
0.07
0.05
0.06
ts
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
300
TJ = 25°C
200
CAPACITANCE (pF)
Cib
100
70
Cob
50
0.1
0.2
0.4 0.6
2.0
1.0
IC, COLLECTOR CURRENT (AMP)
4.0 6.0
30
0.5
1.0
2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
50
Figure 6. Turn-Off Time
Figure 7. Capacitance
3–180
Motorola Bipolar Power Transistor Device Data
BD243B BD243C BD244B BD244C
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.06
VCE = 2.0 V
TJ = 150°C
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
TJ = 25°C
1.6
IC = 1.0 A
1.2
2.5 A
5.0 A
25°C
0.8
– 55°C
0.4
0.1
0.2 0.3 0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
6.0
0
10
20
30
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
2.0
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 25°C to + 150°C
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.06
0.1
0.2
0.3
0.5
1.0
θ
VB FOR VBE
+ 25°C to + 150°C
– 55°C to + 25°C
2.0 3.0 0.4
0.6
*θVC FOR VCE(sat)
– 55°C to + 25°C
*APPLIES FOR IC/IB
≤
5.0
1.2
0.8
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06
0.1
0.2
0.3 0.4 0.6
1.0
2.0 3.0 4.0
6.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
103
VCE = 30 V
IC, COLLECTOR CURRENT (
µ
A)
102
TJ = 150°C
101
100
10–1
10– 2
IC = ICES
REVERSE
FORWARD
100°C
25°C
RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
10M
VCE = 30 V
1.0M
100k
10k
1.0k
0.1k
20
40
60
80
100
120
140
160
TJ, JUNCTION TEMPERATURE (°C)
IC
≈
ICES
IC = 10 x ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
10– 3
– 0.3 – 0.2 – 0.1
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base–Emitter Resistance
Motorola Bipolar Power Transistor Device Data
3–181
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
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