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MMBD6100LT1G_09

Description
0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size112KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MMBD6100LT1G_09 Overview

0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB

MMBD6100LT1G_09 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.2000 A
MMBD6100LT1G
Monolithic Dual
Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
http://onsemi.com
ANODE
1
2
ANODE
3
CATHODE
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate
(Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
SOT−23
CASE 318
STYLE 9
MARKING DIAGRAM
5B M
G
G
5B
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
mAdc)
Reverse Voltage Leakage Current
(V
R
= 50 Vdc)
(For each individual diode while the
second diode is unbiased)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
(Figure 1)
Capacitance
(V
R
= 0 V)
V
(BR)
I
R
70
0.1
Vdc
mAdc
Symbol
Min
Max
Unit
ORDERING INFORMATION
Device
MMBD6100LT1G
MMBD6100LT3G
V
F
0.7
1.1
4.0
Vdc
Package
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
SOT−23 10,000/Tape & Reel
(Pb−Free)
0.55
0.8
t
rr
ns
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
C
2.5
pF
©
Semiconductor Components Industries, LLC, 2009
August, 2009
Rev. 3
1
Publication Order Number:
MMBD6100LT1/D
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