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NSR0230P2T5G_09

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size83KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NSR0230P2T5G_09 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

NSR0230P2T5G_09 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, MINIATURE, PLASTIC, CASE 514AA-01, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingMATTE TIN
Terminal locationEND
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
NSR0230P2, NSVR0230P2,
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.325 V (max) @ I
F
= 10 mA
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current DC
Forward Current Surge Peak
(60 Hz, 1 cycle)
ESD Rating: Class 3B per Human Body Model
ESD Rating:
Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Symbol
V
R
I
F
I
FSM
Value
30
200
1.0
Unit
Vdc
mA
A
2
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
1
K MG
G
SOD−923
CASE 514AA
1
2
K = Specific Device Code*
(Character is rotated 270° clockwise)
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
1. FR−5 Minimum Pad.
Symbol
P
D
Max
200
2.0
R
qJA
T
J
, T
stg
600
−55
to
+125
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
NSR0230P2T5G
Package
SOD−923
(Pb−Free)
Shipping†
2 mm Pitch
8000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
NSVR0230P2T5G SOD−923
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 200 mA)
Symbol
I
R
V
F
Min
Typ
Max
10
Unit
mA
Vdc
0.325
0.500
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 2
1
Publication Order Number:
NSR0230P2/D

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