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BC847CDXV6T5

Description
100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size96KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC847CDXV6T5 Overview

100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847CDXV6T5 Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
MakerON Semiconductor
package instructionPLASTIC, CASE 463A-01, 6 PIN
Contacts6
Manufacturer packaging code463A-01
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
(3)
Q
1
http://onsemi.com
(2)
(1)
Q
2
(4)
(5)
BC847CDXV6T1
(6)
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
6
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
MARKING DIAGRAMS
1x M
G
G
1
R
qJA
1x
Symbol
P
D
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
°C
M
G
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
R
qJA
T
J
, T
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
Rev. 2
1
Publication Order Number:
BC847CDXV6T1/D

BC847CDXV6T5 Related Products

BC847CDXV6T5 BC847CDXV6T1_10 BC847CDXV6T1D
Description 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 2 2 2
Number of terminals 6 6 6
surface mount YES Yes Yes
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Transistor polarity - NPN NPN
Maximum collector current - 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage - 45 V 45 V
Processing package description - PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN
Lead-free - Yes Yes
EU RoHS regulations - Yes Yes
state - ACTIVE ACTIVE
packaging shape - RECTANGULAR RECTANGULAR
Package Size - SMALL OUTLINE SMALL OUTLINE
terminal coating - MATTE TIN MATTE TIN
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY
structure - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Transistor type - GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor - 420 420
Rated crossover frequency - 100 MHz 100 MHz
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