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BC847CDXV6T1_10

Description
100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size96KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC847CDXV6T1_10 Overview

100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847CDXV6T1_10 Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionPLASTIC, CASE 463A-01, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS
Number of components2
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor420
Rated crossover frequency100 MHz
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
(3)
Q
1
http://onsemi.com
(2)
(1)
Q
2
(4)
(5)
BC847CDXV6T1
(6)
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
6
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
MARKING DIAGRAMS
1x M
G
G
1
R
qJA
1x
Symbol
P
D
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
°C
M
G
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
R
qJA
T
J
, T
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
Rev. 2
1
Publication Order Number:
BC847CDXV6T1/D

BC847CDXV6T1_10 Related Products

BC847CDXV6T1_10 BC847CDXV6T5 BC847CDXV6T1D
Description 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 6 6 6
surface mount Yes YES Yes
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Number of components 2 2 2
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Transistor polarity NPN - NPN
Maximum collector current 0.1000 A - 0.1000 A
Maximum Collector-Emitter Voltage 45 V - 45 V
Processing package description PLASTIC, CASE 463A-01, 6 PIN - PLASTIC, CASE 463A-01, 6 PIN
Lead-free Yes - Yes
EU RoHS regulations Yes - Yes
state ACTIVE - ACTIVE
packaging shape RECTANGULAR - RECTANGULAR
Package Size SMALL OUTLINE - SMALL OUTLINE
terminal coating MATTE TIN - MATTE TIN
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY
structure SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS
Transistor type GENERAL PURPOSE SMALL SIGNAL - GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 420 - 420
Rated crossover frequency 100 MHz - 100 MHz

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