BR3500_05 datasheet, PDF - EEWORLD Datasheet

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BR3500_05: DescriptionSILICON BRIDGE RECTIFIERS; File Size33KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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BR3500_05 Overview

SILICON BRIDGE RECTIFIERS

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BR3500 - BR3512

PRV : 50 - 1200 Volts

Io : 35 Amperes

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

SILICON BRIDGE RECTIFIERS

BR50

0.728(18.50)

0.688(17.40)

0.570(14.50)

0.530(13.40)

0.685(16.70) 1.130(28.70)

0.618(15.70) 1.120(28.40)

0.658(16.70)

0.618(15.70)

0.032(0.81)

0.028(0.71)

0.210(5.30)

0.200(5.10)

0.252(6.40)

0.248(6.30)

φ

0.100(2.50)

0.090(2.30)

0.905(23.0)

0.826(21.0)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

* Weight : 17.1 grams

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55

°

C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at I

F

= 17.5 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Typical Thermal Resistance at Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

Notes :

Ta = 25

°

C

Ta = 100

°

C

SYMBOL

V

RRM

V

RMS

V

DC

I

F(AV)

I

FSM

I

2

t

V

F

I

R

I

R(H)

R

θ

JC

R

θ

JA

T

J

T

STG

BR

3500

50

35

50

BR

3501

100

70

100

BR

3502

200

140

200

BR

3504

400

280

400

35

BR

3506

600

420

600

BR

3508

800

560

800

BR

3510

1000

700

1000

BR

3512

1200

840

1200

UNIT

V

A

2

S

V

µA

°C/W

°C

400

660

1.1

10

200

1.5

10

- 40 to + 150

1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate

Page 1 of 2

Rev. 02 : March 24, 2005

BR3500_05 Related Products

	BR3500_05	BR3501	BR3500	BR3502	BR3504	BR3510	BR3506	BR3508	BR3512
Description	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	-
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
package instruction	-	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	-
Reach Compliance Code	-	compli	compli	compli	compli	compli	compli	compli	compli
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Minimum breakdown voltage	-	100 V	50 V	200 V	400 V	1000 V	600 V	800 V	1200 V
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.1 V	1.1 V	1.1 V	1.1 V	1 V	1.1 V	1.1 V	-
JESD-30 code	-	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4
Maximum non-repetitive peak forward current	-	400 A	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	-	4	4	4	4	4	4	4	4
Phase	-	1	1	1	1	1	1	1	1
Number of terminals	-	4	4	4	4	4	4	4	4
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	-	35 A	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Guideline	-	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949
Maximum repetitive peak reverse voltage	-	100 V	50 V	200 V	400 V	1000 V	600 V	800 V	1200 V
surface mount	-	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	-	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	-	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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