BR3500 datasheet, PDF - EEWORLD Datasheet

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BR3500: DescriptionSILICON BRIDGE RECTIFIERS; CategoryDiscrete semiconductor diode; File Size33KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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BR3500 Overview

SILICON BRIDGE RECTIFIERS

BR3500 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	S-PUFM-D4
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
Minimum breakdown voltage	50 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	S-PUFM-D4
Maximum non-repetitive peak forward current	400 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	35 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Guideline	TS 16949
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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BR3500 - BR3512

PRV : 50 - 1200 Volts

Io : 35 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

SILICON BRIDGE RECTIFIERS

BR50

0.728(18.50)

0.688(17.40)

0.570(14.50)

0.530(13.40)

0.685(16.70) 1.130(28.70)

0.618(15.70) 1.120(28.40)

0.658(16.70)

0.618(15.70)

0.032(0.81)

0.028(0.71)

0.210(5.30)

0.200(5.10)

0.252(6.40)

0.248(6.30)

0.100(2.50)

0.090(2.30)

0.905(23.0)

0.826(21.0)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

* Weight : 17.1 grams

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at I

= 17.5 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Typical Thermal Resistance at Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

Notes :

Ta = 25

Ta = 100

SYMBOL

RRM

RMS

F(AV)

FSM

R(H)

STG

3500

3501

100

3502

200

140

200

3504

400

280

400

3506

600

420

600

3508

800

560

800

3510

1000

700

1000

3512

1200

840

1200

UNIT

µA

°C/W

°C

400

660

1.1

200

1.5

- 40 to + 150

1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate

Page 1 of 2

Rev. 02 : March 24, 2005

BR3500 Related Products

	BR3500	BR3501	BR3502	BR3504	BR3510	BR3506	BR3508	BR3512	BR3500_05
Description	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	-	-
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	-
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-
package instruction	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	-	-
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	-
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-
Minimum breakdown voltage	50 V	100 V	200 V	400 V	1000 V	600 V	800 V	1200 V	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1 V	1.1 V	1.1 V	-	-
JESD-30 code	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	-
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A	400 A	-
Number of components	4	4	4	4	4	4	4	4	-
Phase	1	1	1	1	1	1	1	1	-
Number of terminals	4	4	4	4	4	4	4	4	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A	35 A	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Guideline	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	-
Maximum repetitive peak reverse voltage	50 V	100 V	200 V	400 V	1000 V	600 V	800 V	1200 V	-
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	-
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	-
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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