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BR3506

Description
SILICON BRIDGE RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BR3506 Overview

SILICON BRIDGE RECTIFIERS

BR3506 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionS-PUFM-D4
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-D4
Maximum non-repetitive peak forward current400 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
BR3500 - BR3512
PRV : 50 - 1200 Volts
Io : 35 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 17.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Notes :
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
R
θ
JA
T
J
T
STG
BR
3500
50
35
50
BR
3501
100
70
100
BR
3502
200
140
200
BR
3504
400
280
400
35
BR
3506
600
420
600
BR
3508
800
560
800
BR
3510
1000
700
1000
BR
3512
1200
840
1200
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
°C
400
660
1.1
10
200
1.5
10
- 40 to + 150
- 40 to + 150
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005

BR3506 Related Products

BR3506 BR3501 BR3500 BR3502 BR3504 BR3510 BR3508 BR3512 BR3500_05
Description SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free - -
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to -
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
package instruction S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 - -
Reach Compliance Code compli compli compli compli compli compli compli compli -
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
Minimum breakdown voltage 600 V 100 V 50 V 200 V 400 V 1000 V 800 V 1200 V -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1 V 1.1 V - -
JESD-30 code S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 -
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A 400 A 400 A 400 A -
Number of components 4 4 4 4 4 4 4 4 -
Phase 1 1 1 1 1 1 1 1 -
Number of terminals 4 4 4 4 4 4 4 4 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
Maximum output current 35 A 35 A 35 A 35 A 35 A 35 A 35 A 35 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 -
Maximum repetitive peak reverse voltage 600 V 100 V 50 V 200 V 400 V 1000 V 800 V 1200 V -
surface mount NO NO NO NO NO NO NO NO -
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG -
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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