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BYD33M

Description
SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYD33M Overview

SILICON, SIGNAL DIODE

BYD33M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
BYD33D - BYD33M
PRV : 200 - 1000 Volts
Io : 1.3 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
AVALANCHE FAST SOFT-RECOVERY
RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I
R
= 0.1 mA
Maximum Average Forward Current
T
tp
= 55
°C
(Note 1)
SYMBOL
V
RRM
V
R
V
(BR)R-min
I
F(AV)
I
FSM
I
FRM
V
F
I
R
I
R(H)
Trr
R
θ
JA
T
J
T
STG
BYD
33D
200
200
300
BYD
33G
400
400
500
BYD
33J
600
600
700
1.3
20
12
1.3
1.0
100
BYD
33K
800
800
900
BYD
33M
1000
1000
1100
UNIT
V
V
V
A
A
A
V
µA
µA
Maximum Non-Repetitive Peak Forward Surge Current
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage at 1.0 Amp.
Maximum Reverse Current at Reverse Voltage
Maximum Reverse Current at Reverse Voltage Tj = 165
°C
Maximum Reverse Recovery Time (Note 2)
Thermal Resistance - Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Lead Length 10 mm.
(2) Measured with I
F
= 1 Amp to V
R
30V
250
120
- 65 to + 175
- 65 to + 175
300
ns
K/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005

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Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
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