SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX10
•
•
•
•
High Current Capability.
Hermetic TO3 Metal package.
Designed For Switching and Linear Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
160V
160V
125V
7V
25A
30A
5A
150W
0.85W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.17
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 10465
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX10
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICEO
ICEX
IEBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
(1)
(1)
(1)
Parameters
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Test Conditions
VCE = 100V
VCE = 160V
TC = 125°C
VEB = 5V
IC = 10mA
IE = 1.0mA
IC = 10A
IC = 20A
IC = 20A
IC = 10A
IC = 20A
IB = 1.0A
IB = 2A
IB = 2A
VCE = 2V
VCE = 4V
IC = 0
IB = 0
VBE = -1.5V
Min.
Typ
Max.
1.5
1.5
6
1.0
Units
mA
125
7
0.6
1.2
2
20
10
60
V
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 1.0A
f = 10MHz
IC = 20A
IB1 = 2A
IC = 20A
IB1 = -IB2 = 2A
VCC = 100V
VCC = 100V
VCE = 15V
8
MHz
ton
ts
tf
Turn-On Time
Storage Time
Fall Time
1.5
1.2
0.3
µs
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 10465
Issue 1
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX10
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 10465
Issue 1
Page 3 of 3
22.23
(0.875)
max.
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