Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Calogic |
| Parts packaging code | TO-52 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | GATE |
| Configuration | SINGLE |
| Maximum drain current (ID) | 0.4 A |
| Maximum drain-source on-resistance | 5 Ω |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 15 pF |
| JEDEC-95 code | TO-52 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N5432 | 2N5433 | X2N5433 | X2N5432 | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE |
| Parts packaging code | TO-52 | TO-52 | DIE | DIE |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | SORTED, DIE | SORTED, DIE |
| Reach Compliance Code | compli | compli | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum drain current (ID) | 0.4 A | 0.4 A | 0.4 A | 0.4 A |
| Maximum drain-source on-resistance | 5 Ω | 7 Ω | 7 Ω | 5 Ω |
| FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| Maximum feedback capacitance (Crss) | 15 pF | 15 pF | 15 pF | 15 pF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | X-XUUC-N | X-XUUC-N |
| Number of components | 1 | 1 | 1 | 1 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | UNSPECIFIED | UNSPECIFIED |
| Package shape | ROUND | ROUND | UNSPECIFIED | UNSPECIFIED |
| Package form | CYLINDRICAL | CYLINDRICAL | UNCASED CHIP | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES | YES |
| Terminal form | WIRE | WIRE | NO LEAD | NO LEAD |
| Terminal location | BOTTOM | BOTTOM | UPPER | UPPER |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | - |
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