Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE
| Parameter Name | Attribute value |
| Parts packaging code | DIE |
| package instruction | SORTED, DIE |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Maximum drain current (ID) | 0.4 A |
| Maximum drain-source on-resistance | 7 Ω |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 15 pF |
| JESD-30 code | X-XUUC-N |
| Number of components | 1 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | UNSPECIFIED |
| Package form | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |

| X2N5433 | 2N5432 | 2N5433 | X2N5432 | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 | Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE |
| Parts packaging code | DIE | TO-52 | TO-52 | DIE |
| package instruction | SORTED, DIE | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | SORTED, DIE |
| Reach Compliance Code | unknow | compli | compli | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum drain current (ID) | 0.4 A | 0.4 A | 0.4 A | 0.4 A |
| Maximum drain-source on-resistance | 7 Ω | 5 Ω | 7 Ω | 5 Ω |
| FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| Maximum feedback capacitance (Crss) | 15 pF | 15 pF | 15 pF | 15 pF |
| JESD-30 code | X-XUUC-N | O-MBCY-W3 | O-MBCY-W3 | X-XUUC-N |
| Number of components | 1 | 1 | 1 | 1 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | UNSPECIFIED | METAL | METAL | UNSPECIFIED |
| Package shape | UNSPECIFIED | ROUND | ROUND | UNSPECIFIED |
| Package form | UNCASED CHIP | CYLINDRICAL | CYLINDRICAL | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO | YES |
| Terminal form | NO LEAD | WIRE | WIRE | NO LEAD |
| Terminal location | UPPER | BOTTOM | BOTTOM | UPPER |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | - |