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X2N5433

Description
Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerCalogic
Websitehttp://www.calogic.net/
Download Datasheet Parametric Compare View All

X2N5433 Overview

Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE

X2N5433 Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionSORTED, DIE
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)0.4 A
Maximum drain-source on-resistance7 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)15 pF
JESD-30 codeX-XUUC-N
Number of components1
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

X2N5433 Related Products

X2N5433 2N5432 2N5433 X2N5432
Description Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE
Parts packaging code DIE TO-52 TO-52 DIE
package instruction SORTED, DIE CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 SORTED, DIE
Reach Compliance Code unknow compli compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.4 A 0.4 A 0.4 A 0.4 A
Maximum drain-source on-resistance 7 Ω 5 Ω 7 Ω 5 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 15 pF 15 pF 15 pF 15 pF
JESD-30 code X-XUUC-N O-MBCY-W3 O-MBCY-W3 X-XUUC-N
Number of components 1 1 1 1
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material UNSPECIFIED METAL METAL UNSPECIFIED
Package shape UNSPECIFIED ROUND ROUND UNSPECIFIED
Package form UNCASED CHIP CYLINDRICAL CYLINDRICAL UNCASED CHIP
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES
Terminal form NO LEAD WIRE WIRE NO LEAD
Terminal location UPPER BOTTOM BOTTOM UPPER
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -

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