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2N5433

Description
Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerCalogic
Websitehttp://www.calogic.net/
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2N5433 Overview

Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3

2N5433 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-52
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionGATE
ConfigurationSINGLE
Maximum drain current (ID)0.4 A
Maximum drain-source on-resistance7 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-52
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

2N5433 Related Products

2N5433 2N5432 X2N5433 X2N5432
Description Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-52, HERMETIC SEALED PACKAGE-3 Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE Small Signal Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Silicon, Junction FET, SORTED, DIE
Parts packaging code TO-52 TO-52 DIE DIE
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 SORTED, DIE SORTED, DIE
Reach Compliance Code compli compli unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.4 A 0.4 A 0.4 A 0.4 A
Maximum drain-source on-resistance 7 Ω 5 Ω 7 Ω 5 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 15 pF 15 pF 15 pF 15 pF
JESD-30 code O-MBCY-W3 O-MBCY-W3 X-XUUC-N X-XUUC-N
Number of components 1 1 1 1
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND UNSPECIFIED UNSPECIFIED
Package form CYLINDRICAL CYLINDRICAL UNCASED CHIP UNCASED CHIP
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES
Terminal form WIRE WIRE NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM UPPER UPPER
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -
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