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SPP04N60S5_07

Description
4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size483KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SPP04N60S5_07 Overview

4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SPP04N60S5_07 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current4.5 A
Rated avalanche energy130 mJ
Maximum drain on-resistance0.9500 ohm
Maximum leakage current pulse9 A
SPP04N60S5
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-1
V
DS
R
DS(on)
I
D
600
0.95
4.5
PG-TO220
2
V
A
1
23
Type
Package
Ordering Code
SPP04N60S5
PG-TO220
Q67040-S4200
Marking
04N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
Value
4.5
2.8
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.4 A,
V
DD
= 50 V
I
D puls
E
AS
9
130
0.4
4.5
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 4.5 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
A
V
W
°C
V
GS
P
tot
T
j ,
T
stg
50
-55... +150
Operating and storage temperature
Rev. 2.6
Page 1
2007-08-30
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