EEWORLDEEWORLDEEWORLD

Part Number

Search

IPB08CN10NG_10

Description
OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
File Size406KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

IPB08CN10NG_10 Overview

OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
OptiMOS
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max (TO263)
I
D
100
8.2
95
V
mΩ
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Package
Marking
PG-TO263-3
08CN10N
PG-TO262-3
08CN10N
PG-TO220-3
08CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=95 A,
R
GS
=25
I
D
=95 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
Value
95
68
380
262
6
±20
167
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 1.08
page 1
2010-04-26

IPB08CN10NG_10 Related Products

IPB08CN10NG_10 IPB08CN10NG IPI08CN10NG IPP08CN10NG
Description OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Is it Rohs certified? - conform to conform to conform to
Maker - Infineon Infineon Infineon
Parts packaging code - D2PAK TO-262AA TO-220AB
package instruction - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 4 3 3
Reach Compliance Code - compli compli compli
ECCN code - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 262 mJ 262 mJ 262 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 100 V 100 V 100 V
Maximum drain current (Abs) (ID) - 95 A 95 A 95 A
Maximum drain current (ID) - 95 A 95 A 95 A
Maximum drain-source on-resistance - 0.0082 Ω 0.0085 Ω 0.0085 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-263AB TO-262AA TO-220AB
JESD-30 code - R-PSSO-G2 R-PSIP-T3 R-PSFM-T3
JESD-609 code - e3 e3 e3
Humidity sensitivity level - 1 1 1
Number of components - 1 1 1
Number of terminals - 2 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 175 °C 175 °C 175 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 167 W 167 W 167 W
Maximum pulsed drain current (IDM) - 380 A 380 A 380 A
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES NO NO
Terminal surface - MATTE TIN MATTE TIN MATTE TIN
Terminal form - GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED 40 NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
MSP430F2122 cannot be recognized after burning the program
I use IAR software, JTAG serial port emulator. When debugging, I initialize each pin. After the program is burned in, the software cannot recognize 430. For the same board, I changed another 430, whic...
woody13 Microcontroller MCU
The secrets behind the components
[align=left][color=rgb(0, 0, 0)][font=Arial, 微软雅黑,]For engineers working in the electronics industry, they need to use it every day, but in fact, many engineers may not understand the ins and outs of ...
Jacktang Analogue and Mixed Signal
Ultra-powerful KeyStone multi-core ARM and ARM + DSP processors
KeyStone multi-core ARM and ARM + DSP processors include a variety of device options that provide the highest performance at the lowest power levels and costs. TI's KeyStone platform provides up to 5....
wstt DSP and ARM Processors
Ask for WIFI
If the signal I collect is 512 points per second, the frequency is 500HZ, and an 8-bit 52-bit microcontroller is used to implement 12-bit AD, then the amount of data per second I calculate is 500K (16...
amlise RF/Wirelessly
Digital photo frame based on STC12C5A60S2 microcontroller
[align=left][color=#000][backcolor=rgb(209, 217, 226)][font=Simsun][size=12px] [/size][/font][/backcolor][/color][/align][align=left][color=#000][backcolor=rgb(209, 217, 226)][font=Simsun][size=12px]T...
liuyongliuyong 51mcu
MSP430 Detailed Explanation
MSP430 Open categories: MCU , MSP430 series MCU , ultra-low power MCU , 16- bit MCUThe MSP430 series of single-chip microcomputers is a 16 -bit ultra-low power mixed signal processor (Mixed Signal Pro...
Godfrey Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 547  2011  2284  1785  1799  11  41  46  36  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号