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IPP08CN10NG

Description
OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
CategoryDiscrete semiconductor    The transistor   
File Size406KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP08CN10NG Overview

OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPP08CN10NG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)262 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)95 A
Maximum drain current (ID)95 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)167 W
Maximum pulsed drain current (IDM)380 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
OptiMOS
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max (TO263)
I
D
100
8.2
95
V
mΩ
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Package
Marking
PG-TO263-3
08CN10N
PG-TO262-3
08CN10N
PG-TO220-3
08CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=95 A,
R
GS
=25
I
D
=95 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
Value
95
68
380
262
6
±20
167
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 1.08
page 1
2010-04-26

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Description OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Is it Rohs certified? conform to conform to - conform to
Maker Infineon Infineon - Infineon
Parts packaging code TO-220AB D2PAK - TO-262AA
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 - IN-LINE, R-PSIP-T3
Contacts 3 4 - 3
Reach Compliance Code compli compli - compli
ECCN code EAR99 EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 262 mJ 262 mJ - 262 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V - 100 V
Maximum drain current (Abs) (ID) 95 A 95 A - 95 A
Maximum drain current (ID) 95 A 95 A - 95 A
Maximum drain-source on-resistance 0.0085 Ω 0.0082 Ω - 0.0085 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB - TO-262AA
JESD-30 code R-PSFM-T3 R-PSSO-G2 - R-PSIP-T3
JESD-609 code e3 e3 - e3
Humidity sensitivity level 1 1 - 1
Number of components 1 1 - 1
Number of terminals 3 2 - 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C - 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE - IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED - 260
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 167 W 167 W - 167 W
Maximum pulsed drain current (IDM) 380 A 380 A - 380 A
Certification status Not Qualified Not Qualified - Not Qualified
surface mount NO YES - NO
Terminal surface MATTE TIN MATTE TIN - MATTE TIN
Terminal form THROUGH-HOLE GULL WING - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - 40
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
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