IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
OptiMOS
™
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max (TO263)
I
D
100
8.2
95
V
mΩ
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Package
Marking
PG-TO263-3
08CN10N
PG-TO262-3
08CN10N
PG-TO220-3
08CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=95 A,
R
GS
=25
Ω
I
D
=95 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
Value
95
68
380
262
6
±20
167
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 1.08
page 1
2010-04-26
IPB08CN10N G
IPI08CN10N G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction
4)
-
ambient (TO220, TO262, TO263)
R
thJC
R
thJA
minimal footprint
6 cm2 cooling area
5)
-
-
-
-
-
-
0.9
62
40
K/W
Values
typ.
max.
IPP08CN10N G
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=130 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=95 A,
(TO263)
V
GS
=10 V,
I
D
=95 A,
(TO220, TO262)
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=95 A
100
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
10
1
6.1
100
100
8.2
nA
mΩ
-
-
57
6.4
1.5
113
8.5
-
-
Ω
S
1)
J-STD20 and JESD22
See figure 3
T
jmax
=150 °C and duty cycle D=0.01 for V
gs
<-5V
2)
3)
4)
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.08
page 2
2010-04-26
IPB08CN10N G
IPI08CN10N G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
IPP08CN10N G
Unit
max.
Values
typ.
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=47.5 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
5010
757
43
15
24
26
6
6660
1010
65
23
36
39
10
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=95 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
27
18
30
75
5.5
80
36
27
44
100
-
106
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=95 A,
T
j
=25 °C
V
R
=50 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1
105
270
95
380
1.2
A
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.08
page 3
2010-04-26
IPB08CN10N G
IPI08CN10N G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
IPP08CN10N G
200
100
160
80
120
60
P
tot
[W]
80
I
D
[A]
40
40
20
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
10 µs
10
2
100 µs
1 ms
DC
10 ms
0.2
Z
thJC
[K/W]
I
D
[A]
0.1
10
1
10
-1
0.05
0.02
10
0
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.08
page 4
2010-04-26
IPB08CN10N G
IPI08CN10N G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
350
10 V
8V
7V
IPP08CN10N G
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
4.5 V
5V
5.5 V
300
250
6.5 V
15
200
R
DS(on)
[m
Ω
]
I
D
[A]
10
6V
150
6V
10 V
100
5.5 V
5
50
5V
4.5 V
0
0
1
2
3
4
5
0
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
140
150
120
100
100
g
fs
[S]
25 °C
I
D
[A]
175 °C
80
60
50
40
20
0
0
2
4
6
8
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 1.08
page 5
2010-04-26
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