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BCP68-10E6327

Description
Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size103KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCP68-10E6327 Overview

Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

BCP68-10E6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
ConfigurationSINGLE
Minimum DC current gain (hFE)85
JESD-30 codeR-PSSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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