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FE3D

Description
3 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size92KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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FE3D Overview

3 A, 200 V, SILICON, RECTIFIER DIODE

FE3D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Is SamacsysN
Base Number Matches1
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
FE3A ~ FE3D
PRV : 50 -
200
Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass passivated junction chip
Superfast recovery time for high efficiency
High surge current capability
High current capability
Low leakage current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SUPER FAST RECTIFIERS
DO-201AD
1.00 (25.4)
MIN.
0.21 (5.33)
0.19 (4.82)
0.375 (9.52)
0.285 (7.24)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum instantaneous Forward Voltage at I
F
= 3 A
Maximum Reverse Current
at Rated Peak Reverse Voltage
V
R
= V
RRM
, Ta = 25 °C
V
R
= V
RRM
, Ta = 100 °C
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
R
ӨJA
R
ӨJL
C
J
T
J
T
STG
FE3A
50
50
FE3B
100
100
3.0
FE3C
150
150
FE3D
200
200
UNIT
V
V
A
A
V
μA
μA
ns
K/W
K/W
pF
°C
°C
125
0.95
5.0
50
35
55
20
100
- 55 to + 175
- 55 to + 175
Maximum Reverse Recovery Time ( Note 1 )
Typical Thermal Resistance ( Note 2, 3 )
Typical Junction Capacitance ( V
R
= 4V, f = 1 MHz )
Operating Junction Temperature Range
Storage Temperature Range
Notes :
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(2) Thermal resistance from junction to ambient and/or lead, 0.375 "(9.5mm) lead length mounted on P.C.B. with 0.5x0.5 (12x12mm)copper pads.
(3) Thermal resistance from junction to lead at 0.375 " (9.5 mm) lead length with both leads attached to heatsinks
Page 1 of 2
Rev. 00 : January 28, 2008

FE3D Related Products

FE3D FE3B FE3C FE3A
Description 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 3 A, 150 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201
Is it lead-free? Lead free Lead free Lead free Lead free
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli

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