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GBU806

Description
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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GBU806 Overview

8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBU806 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PSFM-T4
Reach Compliance Codecompli
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
GBU8005 ~ GBU810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* Surge overload rating - 200 Amperes peak
* Ideal for printed circuit boards
* Reliable low cost construction utilizing
molded plastic technique
* Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
* Mounting Position : Any
* Pb / RoHS Free
Glass Passivated
Single-Phase Bridge Rectifiers
0.88 (22.3)
0.86 (21.8)
0.740 (18.8)
0.720 (18.3)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.850 (2.16)
0.080 (2.03)
0.065 (1.65)
0.187 (4.7)
0.148 (3.8)
9
o
Typ.
~ ~
+
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current Tc=100°C
(with heatsink note2)
(without heatsink )
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JC
T
J
T
STG
T
J
= 25
°C
T
J
= 100
°C
GBU
8005
50
35
50
GBU
801
100
70
100
GBU
802
200
140
200
GBU
804
400
280
400
8.0
3.2
200
166
1.0
5.0
500
60
2.2
GBU
806
600
420
600
0.080 (2.03)
0.060 (1.52)
GBU
808
800
560
800
0.720 (18.29)
0.680 (17.27)
0.060 (1.52)
0.045 (1.14)
GBU
810
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
µA
pF
°C/W
°C
°C
Peak Forward Surge Current, 8.3ms Single half sine-
wave Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Maximum Instantaneous Forward Voltage at I
F
= 4 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Typical Junction capacitance per element (Note1)
- 50 to + 150
- 50 to + 150
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
(2) Device mounted on 100mm x 100mm x 1.6mm Cu. Plate heatsink.
Page 1 of 2
Rev. 02 : March 25, 2005

GBU806 Related Products

GBU806 GBU801 GBU8005 GBU804 GBU802 GBU808 GBU810
Description 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli compli compli
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 600 V 100 V 50 V 400 V 200 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free Lead free
Maker EIC [EIC discrete Semiconductors] - - EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Minimum breakdown voltage 600 V - 50 V 400 V 200 V 800 V 1000 V
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
JESD-30 code R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Phase 1 - 1 1 1 1 1
Number of terminals 4 - 4 4 4 4 4
Minimum operating temperature -55 °C - -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Guideline TS 16949 - TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE

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