EEWORLDEEWORLDEEWORLD

Part Number

Search

GBU801

Description
3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

GBU801 Online Shopping

Suppliers Part Number Price MOQ In stock  
GBU801 - - View Buy Now

GBU801 Overview

3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBU801 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current200 A
Number of components4
Maximum operating temperature150 °C
Maximum output current8 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
surface mountNO
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GBU8005 ~ GBU810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* Surge overload rating - 200 Amperes peak
* Ideal for printed circuit boards
* Reliable low cost construction utilizing
molded plastic technique
* Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
* Mounting Position : Any
* Pb / RoHS Free
Glass Passivated
Single-Phase Bridge Rectifiers
0.88 (22.3)
0.86 (21.8)
0.740 (18.8)
0.720 (18.3)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.850 (2.16)
0.080 (2.03)
0.065 (1.65)
0.187 (4.7)
0.148 (3.8)
9
o
Typ.
~ ~
+
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current Tc=100°C
(with heatsink note2)
(without heatsink )
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JC
T
J
T
STG
T
J
= 25
°C
T
J
= 100
°C
GBU
8005
50
35
50
GBU
801
100
70
100
GBU
802
200
140
200
GBU
804
400
280
400
8.0
3.2
200
166
1.0
5.0
500
60
2.2
GBU
806
600
420
600
0.080 (2.03)
0.060 (1.52)
GBU
808
800
560
800
0.720 (18.29)
0.680 (17.27)
0.060 (1.52)
0.045 (1.14)
GBU
810
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
µA
pF
°C/W
°C
°C
Peak Forward Surge Current, 8.3ms Single half sine-
wave Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Maximum Instantaneous Forward Voltage at I
F
= 4 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Typical Junction capacitance per element (Note1)
- 50 to + 150
- 50 to + 150
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
(2) Device mounted on 100mm x 100mm x 1.6mm Cu. Plate heatsink.
Page 1 of 2
Rev. 02 : March 25, 2005

GBU801 Related Products

GBU801 GBU806 GBU8005 GBU804 GBU802 GBU808 GBU810
Description 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli compli compli
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 600 V 50 V 400 V 200 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? - Lead free Lead free Lead free Lead free Lead free Lead free
Maker - EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Minimum breakdown voltage - 600 V 50 V 400 V 200 V 800 V 1000 V
Diode component materials - SILICON SILICON SILICON SILICON SILICON SILICON
JESD-30 code - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Phase - 1 1 1 1 1 1
Number of terminals - 4 4 4 4 4 4
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Guideline - TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
StellarisWare Software Update (2011.11.08)
I haven't paid attention to the development of M3 for a long time. Today, I updated the progress and found that the original LuminaryMicro website has gone with the wind and has moved to the TI offici...
tomexou Microcontroller MCU
Serial communication problem
[color=#000][backcolor=rgb(209, 217, 226)][font=Simsun]Can the serial communication select the output mode from high byte to low byte? [/font][/backcolor][/color] [color=#000][backcolor=rgb(209, 217, ...
功夫佬 51mcu
Comparison between Linear Matched Independent Current Sources and Traditional White LED Driver Solutions
summary WLED solutions integrate the advantages of white light LED technology and innovative energy-saving solutions (such as ambient light control lighting), so that they can be applied in a wider ra...
德州仪器 Power technology
Memory controller and mmu issues
What is the difference between a memory controller and an MMU? I am using the DaVinci series of processors, which include ARM926, VPSS (mainly used for video processing), and DSP. These things all wor...
bb8224575 Embedded System
Please tell me how to dig out a small piece of the board from Altium
There is a piece of board with an empty space on it, about 5CM*5CM. I happen to have a small board inside the 5CM*5CM area. I want to dig it out and make other small boards. How should I cut it in the...
sky999 PCB Design
Can the M3 serial port be directly connected to the 51 microcontroller serial port?
I am using LM3S6965 now. I want to ask if the serial port of this device can be directly connected to the serial port of 51 microcontroller? Can RX connect to TX and TX connect to RX? I am trying, but...
longxtianya Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1425  2623  1418  1150  2058  29  53  24  42  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号