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1N4007

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size44KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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1N4007 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

1N4007 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
1N4001 - 1N4007
BY133
PRV : 50 - 1300 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
Ta = 25
°C
at rated DC Blocking Voltage
Ta = 100
°C
Typical Reverse Revcovery Time
(I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
1300
1000
1300
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
R
θ
JA
T
J
T
STG
30
1.1
5.0
50
2.0
15
26
- 65 to + 175
- 65 to + 175
A
V
µA
µA
µs
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 05 : March 25, 2005

1N4007 Related Products

1N4007 1N4005 1N4006 1N4002 1N4003 1N4004 BY133
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-41
Number of components 1 1 1 1 1 1 1
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum repetitive peak reverse voltage 1000 V 600 V 800 V 100 V 200 V 400 V 1300 V
Number of terminals 2 2 2 2 2 2 -
state ACTIVE ACTIVE ACTIVE TRANSFERRED - - -
packaging shape round round ROUND round - - -
Package Size LONG FORM LONG FORM LONG FORM LONG FORM - - -
Terminal form Wire Wire WIRE Wire WIRE WIRE -
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL -
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy - - -
structure single single SINGLE single - - -
Shell connection isolation isolation ISOLATED isolation ISOLATED ISOLATED -
Diode component materials silicon silicon SILICON silicon SILICON SILICON -
Maximum average forward current 1 A 1 A 1 A 1 A - - -
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