IDT7MC4032S50CVB datasheet, PDF

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IDT7MC4032S50CVB: DescriptionSRAM Module, 16KX32, 50ns, CMOS; Categorystorage storage; File Size179KB，7 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7MC4032S50CVB Overview

SRAM Module, 16KX32, 50ns, CMOS

IDT7MC4032S50CVB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	50 ns
I/O type	SEPARATE
JESD-30 code	R-XDMA-T88
JESD-609 code	e0
memory density	524288 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	88
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX32
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP88,.1
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.16 A
Minimum standby current	4.5 V
Maximum slew rate	1.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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Description	SRAM Module, 16KX32, 50ns, CMOS	SRAM Module, 16KX32, 25ns, CMOS	SRAM Module, 16KX32, 25ns, CMOS	SRAM Module, 16KX32, 40ns, CMOS	SRAM Module, 16KX32, 40ns, CMOS	SRAM Module, 16KX32, 30ns, CMOS	SRAM Module, 16KX32, 30ns, CMOS	SRAM Module, 16KX32, 50ns, CMOS	SRAM Module, 16KX32, 20ns, CMOS	SRAM Module, 16KX32, 70ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	3A991.B.2.B	3A001.A.2.C
Maximum access time	50 ns	25 ns	25 ns	40 ns	40 ns	30 ns	30 ns	50 ns	20 ns	70 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88	R-XDMA-T88
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	88	88	88	88	88	88	88	88	88	88
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	125 °C	70 °C	125 °C	70 °C	125 °C	70 °C	70 °C	125 °C
organize	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1	DIP88,.1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	225	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.16 A	0.16 A	0.16 A	0.12 A	0.16 A	0.12 A	0.16 A	0.12 A	0.16 A	0.16 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	1.12 mA	1.2 mA	1.2 mA	1 mA	1.12 mA	1 mA	1.12 mA	1 mA	1.2 mA	1.12 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	MILITARY	COMMERCIAL	MILITARY	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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